MWI225-12E9 IXYS, MWI225-12E9 Datasheet
MWI225-12E9
Specifications of MWI225-12E9
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MWI225-12E9 Summary of contents
Page 1
... VJ d(off 600 200 ± 3.6 Ω off MHz ies 600 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 11/12 9/ Maximum Ratings 1200 ± 20 355 250 I = 500 CM V < V CEK = 5 Ω ...
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... Weight * ) · resp CEsat therm-chip C F IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Maximum Ratings 205 400 = 0 V 10000 R Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...
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... Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved = tolerance for all dimensions: MWI 225-12 E9 20100421a ...
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... Fig. 3 Typ. output characteristics [V] -5 -10 -15 - [µC] G Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 400 300 I CE 200 [A] 100 Fig. 2 Typ. transfer characteristics 400 300 I C 200 9 V [A] 100 ...
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... E rec(off) 4 500 1000 1500 2000 di/dt [A/µs] Fig. 11 Typ. turn off energy and recovered charge of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 240 50 t d(on) 40 180 E off 30 t [mJ] ...