MWI225-12E9 IXYS, MWI225-12E9 Datasheet - Page 3

• Manufacturer Part Number: MWI225-12E9
• Description: Discrete Semiconductor Modules 225 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI225-12E9

• Channel Type: N
• Configuration: Hex
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 355
• Ic80, Tc = 80°c, Igbt, (a): 250
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 21
• Rthjc, Max, Igbt, (k/w): 0.09
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 205
• Package Style: E+
• Lead Free Status / RoHS Status: Compliant

MWI 225-12 E9
Dimensions in mm (1 mm = 0.0394")
= tolerance for all dimensions:
IXYS reserves the right to change limits, test conditions and dimensions.
20100421a
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