FZ1800R12KF4 Infineon Technologies, FZ1800R12KF4 Datasheet - Page 3
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FZ1800R12KF4
Manufacturer Part Number
FZ1800R12KF4
Description
IGBT Modules N-CH 1.2KV 1.8KA
Manufacturer
Infineon Technologies
Datasheet
1.FZ1800R12KF4.pdf
(4 pages)
Specifications of FZ1800R12KF4
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Configuration
Triple Common Emitter Common Gate
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.7 V
Continuous Collector Current At 25 C
1800 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
5 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM190
Ic (max)
1,800.0 A
Vce(sat) (typ)
2.7 V
Technology
IGBT2 Standard
Housing
IHM 190 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZ1800R12KF4
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FZ1800R12KF4
Quantity:
55
i
i
i
C
C
F
4000
3000
2000
1000
4000
3000
2000
1000
4000
3000
2000
1000
[A]
[A]
[A]
0
0
0
0,5
1
5
FZ 1800 R 12 KF4
Bild / Fig. 1
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
V
- - - - t
____ t
FZ 1800 R 12 KF4
Bild / Fig. 3
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
V
FZ 1800 R 12 KF4
Bild / Fig. 5
Durchlaßkennlinie der Inversdiode (typisch)
Forward charakteristic of the inverse diode (typical)
----- t
___ t
GE
CE
= 20V
= 15V
vj
vj
vj
vj
= 25°C
= 125°C
= 125°C
= 25°C
6
1,0
2
7
1,5
8
3
9
2,0
125°C
25°C
t
vj
=
10
4
v
v
v
CE
GE
F
2,5
[V]
[V]
[V]
11 11
12
3,0
5
i
Z
[°C/W]
C
(th)JC
4000
3000
2000
1000
10
10
10
[A]
-1
-2
-3
0
8
6
4
2
8
6
4
2
10
1
FZ 1800 R 12 KF4
Bild / Fig. 2
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
t
FZ 1800 R 12 KF4
Bild / Fig. 4
Transienter innerer Wärmewiderstand (DC)
Transient thermal impedance (DC)
vj
-3
= 125°C
2
4
6
10
2
-2
2
4
6
10
3
-1
2
FZ 1800 R 12 KF4
4
6
V
GE
10
4
v
CE
=20V
0
[V]
t [s]
2
Diode
IGBT
4
15V
12V
10V
6
9V
8V
10
5
1