TIM1414-8L Toshiba, TIM1414-8L Datasheet

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TIM1414-8L

Manufacturer Part Number
TIM1414-8L
Description
Manufacturer
Toshiba
Datasheet
1.TIM1414-8L.pdf (4 pages)

Specifications of TIM1414-8L

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Pin Count
3
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TIM1414-8L
Manufacturer:
SYNERGY
Quantity:
5 000
Company:
H&T Electronics H&T Electronics
Part Number:
TIM1414-8L
Quantity:
20
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 150 Ω ( MAX.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
LOW INTERMODULATION DISTORTION
rd
IM3=-45 dBc at Pout= 28.0dBm
Single Carrier Level
HIGH POWER
P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
IDS2
I
I
η
th(c-c)
IM3
GSoff
DS1
DSS
gm
GSO
1dB
1dB
add
(VDS X IDS + Pin – P1dB)
f= 14.0 to 14.5GHz
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
CONDITIONS
Two-Tone Test
CONDITIONS
Po=28. 0dBm
= 4.0 A
= 120mA
= -120μA
= 3V
=
=
= 0V
VDS= 9V
X Rth(c-c)
3V
3V
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
HIGH GAIN
G1dB=5.0 dB at 14.0 GHz to 14.5 GHz
MICROWAVE POWER GaAs FET
TIM1414-8L
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
° C
%
A
A
V
A
V
MIN.
38.5
MIN.
-2.0
-42
4.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
TYP. MAX.
39.5
Rev. Jul. 2006
TYP. MAX.
2400
-45
5.0
3.4
3.4
-3.5
20
8.0
1.6
⎯
⎯
4.4
4.4
80
-5.0
⎯
⎯
⎯
⎯
2.5
⎯
⎯
⎯

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TIM1414-8L Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1414-8L HIGH GAIN G1dB=5 14.0 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED FET ...

Page 2

... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11C1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-8L SYMBOL UNIT ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V IDS≅3.4A 41 Pin=34.5 dBm Output Power(Pout) vs. Input Power(Pin) 42 freq.=14.5GHz 41 VDS=9V IDS≅3. TIM1414-8L 14.0 14.25 Frequency(GHz) Pout ηadd 31 33 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc IM3 vs. Output Power Characteristics -10 VDS=9V freq.=14.5GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM1414-8L 80 120 Tc( ° 160 200 31 33 ...

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