NE 34018-T1 Renesas Electronics America, NE 34018-T1 Datasheet

NE 34018-T1

Manufacturer Part Number

NE 34018-T1

Description

Manufacturer

Renesas Electronics America

Datasheet

1.NE_34018-T1.pdf (10 pages)

Specifications of NE 34018-T1

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FEATURES

• LOW COST MINIATURE PLASTIC PACKAGE

• LOW NOISE FIGURE:

• HIGH ASSOCIATED GAIN:

• L

• TAPE & REEL PACKAGING

DESCRIPTION

NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-

tion FET housed in a miniature (SOT-343) plastic surface

mount package. The device is fabricated using ion implanta-

tion for improved RF and DC performance, reliability, and

uniformity. Its low noise figure, high gain, small size and

weight make it an ideal low noise amplifier transistor in the 1-

3 GHz frequency range. The NE34018 is suitable for GPS,

PCS, WLAN, MMDS, and other commercial applications.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

Note:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

ELECTRICAL CHARACTERISTICS

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production

line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.

(SOT-343)

0.6 dB typical at 2 GHz

16.0 dB typical at 2 GHz

SYMBOL

O/P I

TH(CH-A)

GSO

= 0.6 µ µ µ µ µ m, W

DSS

1dB

Noise Figure at V

Associated Gain at V

Output Power at 1 dB Gain Compression Point, f = 2 GHz

Gain at P

Output I

Saturated Drain Current at V

Pinch Off Voltage at V

Transconductance at V

Gate to Source Leakage Current at V

Thermal Resistance (Channel to Ambient)

= 400 µ µ µ µ µ m

= 2 V, I

= 3 V, I

= 2 V, I

= 3 V, I

= 2 V, I

1dB

at f = 2 GHz, ∆f = 1 MHz

, f = 2 GHz

PARAMETERS AND CONDITIONS

= 30 mA

= 10 mA

= 30 mA

= 10 mA

= 30 mA

= 2 V, I

PACKAGE OUTLINE

GaAs HJ-FET L TO S BAND

= 2 V, I

PART NUMBER

= 2 V, I

= 5 mA, f = 2 GHz

= 2 V, V

LOW NOISE AMPLIFIER

= 5 mA, f = 2 GHz

= 100 µA

= 5 mA

(New Plastic Package)

= 25°C)

= -3 V

= 0 V

18 Package

0.5

California Eastern Laboratories

NOISE FIGURE & ASSOCIATED

UNITS

˚C/W

dBm

µA

GAIN vs. FREQUENCY

Frequency, f (GHz)

= 3 V, I

MIN

14.0

-2.0

= 20 mA

NE34018

5 6 7 8 910

NE34018

TYP

16.0

16.5

17.0

17.5

-0.8

833

0.6

0.5

SOT-343 Style

MAX

120

-0.2

1.0

Related parts for NE 34018-T1

NE 34018-T1 Summary of contents

Page 1

FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz • HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz • 0.6 µ µ µ µ µ ...

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Drain Voltage GDO V Gate to Source Voltage GSO I Drain Current DS T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T ...

Page 3

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. ...

Page 4

TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. ...

Page 5

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 (GHz) MAG ANG 0.50 0.969 -18.6 0.60 0.958 -22.1 0.70 0.946 -25.7 0.80 0.931 -29.2 0.90 0.916 -32.7 1.00 0.899 -36.1 1.20 0.864 -42.9 ...

Page 6

NE34018 TYPICAL SCATTERING PARAMETERS GHz . GHz 1.5 2 -.2 -.4 -.6 -1.5 -. ...

Page 7

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 (GHz) MAG ANG 0.500 0.969 -18.7 0.600 0.957 -22.2 0.700 0.945 -25.8 0.800 0.930 -29.3 0.900 0.915 -32.7 1.000 0.898 -36.1 1.200 0.862 -42.8 ...

Page 8

NE34018 NONLINEAR MODEL SCHEMATIC LG_PKG GATE 0.18nH FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.6885 RG VTOSC 0 RD ALPHA 5 RS BETA 0.1838 RGMET GAMMA 0.038 KF GAMMADC 0. 1.8 TNOM DELTA 0.25 XTI VBI 0.7 ...

Page 9

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 2.1 ± 0.2 1.25 ± 0 2.0 ± 0.2 0.65 0. +0.10 0.4 -0.05 0.3 0.9 ± 0 0.1 Life Support Applications These NEC products are ...

Page 10

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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