NE960R575-AZ Renesas Electronics America, NE960R575-AZ Datasheet - Page 2
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NE960R575-AZ
Manufacturer Part Number
NE960R575-AZ
Description
Manufacturer
Renesas Electronics America
Datasheet
1.NE960R575-AZ.pdf
(8 pages)
Specifications of NE960R575-AZ
Lead Free Status / RoHS Status
Supplier Unconfirmed
ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(T
2
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Forward Current
Gate Reverse Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gain Compression
Channel Temperature
Saturated Drain Current
Pinch-off Voltage
Gate to Drain Break Down Voltage
Thermal Resistance
Output Power at P
Output Power at 1 dB Gain
Compression Point
Power Added Efficiency at P
Linear Gain
A
Operation in excess of any one of these parameters may result in permanent damage.
Remark DC and RF performance is 100 % testing.
= +25 C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Parameter
Parameter
in
= +19 dBm
o (1dB)
Symbol
Symbol
Gcomp
Symbol
P
V
BV
V
V
T
I
P
o (1 dB)
I
T
T
I
P
R
G
GSO
I
DSS
V
GF
GR
DS
D
stg
DS
ch
ch
out
add
T
th
p
L
gd
A
= +25 C)
Data Sheet PG10026EJ02V0DS
V
V
I
Channel to Case
f = 14.5 GHz, V
R
I
gd
Dset
DS
DS
g
= 2 mA
= 1 k
= 1.5 V, V
= 2.5 V, I
= 180 mA (RF OFF)
Test Conditions
Test Condition
D
GS
= 2 mA
DS
= 0 V
= 9.0 V
–65 to +175
Ratings
+5.0
–5.0
175
0.7
5.0
15
–7
MIN.
MIN.
0.18
–2.5
15
25.5
8.0
TYP.
TYP.
–1.8
26.5
27.5
9.0
0.4
9.0
30
NE960R5 SERIES
MAX.
MAX.
+130
–0.5
9.0
3.0
0.7
30
°C/W
dBm
dBm
Unit
Unit
Unit
mA
mA
W
dB
dB
V
V
A
%
V
A
V
V
C
C
C