IP4051CX11/LF,135 NXP Semiconductors, IP4051CX11/LF,135 Datasheet
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IP4051CX11/LF,135
Specifications of IP4051CX11/LF,135
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IP4051CX11/LF,135 Summary of contents
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AN10911 SD(HC)-memory card and MMC interface conditioning Rev. 01 — 29 April 2010 Document information Info Content Keywords SD-memory card, Multi Media Card (MMC), ElectroStatic Discharge (ESD) protection, ElectroMagnetic Interference (EMI) filtering, voltage level translator Abstract The document gives an ...
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... NXP Semiconductors Revision history Rev Date Description 01 20100429 Initial version Contact information For more information, please visit: For sales office addresses, please send an email to: AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. ...
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... ESD protection and EMI filtering should also, where possible, integrate biasing circuits/resistors into a single small-sized package. The NXP Semiconductors SD-memory card interface conditioning devices explained in this document fully support this continuing trend and offer interface conditioning functions such as: • ...
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... NXP Semiconductors • Voltage level translation to enable the use of low-voltage host processors to communicate with 2 3.6 V compliant SD-memory card devices 2. SD-memory card electrical interface Today, most appliances use the (2 3.6 V) operating mode. This enables the use of a fixed voltage interface and power supply to reduce cost and complexity of the control circuitry. All further descriptions are related to this “ ...
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... NXP Semiconductors Table 1. Values taken from Symbol Pup Table 2. Symbol CARD C HOST + BUS CMD R DAT3 L ch [1] SD-memory card specification is: V NXP V [2] SD-memory card specification is: V NXP V [3] The limits are chosen to cover also the MMC specification more easily 0. 0.125 * V OL Fig 1 ...
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... NXP Semiconductors Fig 2. All further considerations are based on a chosen 20 % and 70 % threshold respectively (related to the SD-memory card supply voltage V otherwise indicated. These relative voltage levels also simplify an alignment with the MMC specification. 2.2 SD-memory card bus timing conditions The SD-memory card interface has different timing requirements for its default mode and the high-speed mode MHz clock frequency ...
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... NXP Semiconductors 2.3 Capacitive load at the interface conditioning device output In the NXP data sheets of devices such as IP4853CX24/LF, IP4352CX24/LF etc. rise time and fall time requirements are specified similarly to the data shown in the IP4853CX24/LF data sheet). Table amb Symbol The following abbreviations are used: • ...
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... NXP Semiconductors Fig 3. AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning Host interface C HOST C BUS C PCB1 C HOST C Filter SD: MMC: SD Memory Card: Multi Media Card: Note lumped representative of the total channel capacitcance BUS of PCB, interface conditioning device and card holder etc . ...
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... NXP Semiconductors 2.4 SD-memory card detect mechanism To detect an SD-memory card, two different mechanisms can be used. The preferred detection mechanism uses a mechanical switch in the card holder. The other mechanism is based on the pull-up resistor integrated into the SD-memory card. This resistor is connected to the DAT3/CD pin (CD = Card Detect). A detailed schematic ...
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... NXP Semiconductors Table 5. (values taken from Symbol Push-pull mode bus signal level for the dual voltage MMC in 1. 1.95 V mode, for high-voltage specified above for high-voltage MMC [1] Low-voltage levels are part of the dual voltage range card specification including also the high-voltage range ...
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... NXP Semiconductors 3.2 Bus timing conditions The MMC interface has different timing requirements for its default mode and the high-speed mode running MHz. Special attention should be paid to the clock signal rise time/fall time requirement (3 ns maximum) which is similar to the high-voltage range cards and the SD-memory card timing conditions (see Also, a reduced clock speed MHz can be used with these cards to save power in appliances that do not require high data rates ...
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... Passive ESD protection and EMI filter devices NXP Semiconductors offers a wide range of devices for the interface conditioning of the SD-memory card and/or MMC interface. The product range covers basic EMI filters and ESD protection devices (IP4252CZ12-6 or IP4252CZ16- fully integrated interface device containing voltage translators, LDO, EMI filtering, high-level ESD protection, and all required biasing/pull-up/pull-down resistors integrated into a single monolithic IP4853CX24/LF ...
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... NXP Semiconductors Even though the MMC and SD-memory card specifications state exact minimum and maximum values for the various internal and external pull-up and pull-down resistors, a majority of implemented interfaces in available appliances do not follow these recommendations. Especially the minimum CMD signal pull-up resistor value is often undercut to guarantee a sufficiently short rise time in an open-drain communication mode ...
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... NXP Semiconductors Table 9. SD-memory card and MMC interface devices overview Product name Device type Bidirectional memory card interface voltage translator device, IC level ESD protection according IEC 61340-3-1, HBM Active, 1.8 V ⇔ 2.9 V IP4852CX25/LF voltage translator LDO, voltage translators, ESD protection and EMI filter and biasing resistors included WP and CD, integrated ESD protection level according IEC61000-4-2, level 4 Active, 1.8 V ⇔ ...
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... C ch Due to the integrated symmetrical pi-filter structure, also often referred to as CRC structure, all NXP Semiconductors IP425x devices offer a direction-independent and symmetrical ESD protection as well as a direction-independent and symmetrical EMI filter performance. The integrated pi-filter structures result in a very low ESD clamping voltage compared to single diode ESD protection implementations and/or devices ...
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... NXP Semiconductors optional electrical Card Detect DAT3/CD-pull-up 10k 100 k DAT1 DAT0 CLK CMD DAT3/CD DAT2 CD WP DAT3/CD-pull-down > 270k, Exact value depends on required logic levels Fig 5. Application schematic diagram of IP4252CZ12-6 and IP4252CZ16 SD-memory card interface The implementation of a Write-Protect (WP) contact is only possible in applications which are supporting standard size SD-memory cards ...
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... NXP Semiconductors V CC DAT1 DAT0 CLK CMD DAT3/CD DAT2 CD WP Fig 6. Application schematic diagram of IP4252CZ16-8 using a mechanical card detect switch In case a mechanical card-detection switch is prohibited e.g. due to size constraints for the card holder, an electrical card-detection can be used as an alternative but only for an SD-memory card interface. After power-up, DAT3/CD is connected kΩ ...
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... NXP Semiconductors Optional electrical Card Detect DAT1 DAT0 CLK CMD DAT3/CD DAT2 DAT3/CD-pull-down > 270 k , Exact value depends on required logic levels Fig 7. Application schematic diagram of IP4252CZ12-6 using electrical card detection For the latest 8-bit MMC interface, 10 channels have to be ESD-protected and EMI-filtered. A combination of IP4252CZ8-4 (4-channel) and IP4252CZ12-6 (6-channel) is ...
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... NXP Semiconductors 5.2 ESD protection EMI filter devices CSP IP4051CX11/LF Both devices contain the exact same circuitry consisting of four ESD-protected and EMI-filtered channels, two of which contain pull-up resistors (see are optimized for the non-high-speed MMC cards but can also be used for the SD-memory card SPI mode ...
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... NXP Semiconductors 5.2.1 Application information of IP4051CX11/ SPI mode SD-memory card interface In case a full 4-bit/8-bit memory card interface implementation on the host side is not required or not possible (e.g. too high design-in effort), SD-memory cards/MMC offer an SPI mode interface function. This interface type requires only four interface lines and uses a single-bit physical data transmission with a maximum of 25 MHz clock frequency ...
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... NXP Semiconductors Table 12. Symbol Parameter ESD R s(ch) R DAT R CMD Device withstands more than 1000 discharges of ±15 kV contact discharge according the IEC 61000-4-2 [2] model, far exceeding the specified level 4. Fig 11. Schematic view for IP4060CX16/LF AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning ...
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... NXP Semiconductors 5.3.1 MMC interfacing using IP4060CX16/LF The IP4060CX16/LF contains ESD protection, EMI filtering and provides pull-up resistors according to the MMC specification for a 4-bit interface implementation. Even though the CMD line pull-up resistor value is lower than the 10 kΩ recommended in the SD-memory card specification, the IP4060CX16/LF is often used in conjunction with this interface ...
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... NXP Semiconductors Table 13. Symbol Parameter ESD R 1 10- [ [2] Pins A1, B2, C1, D1, E1, A3, E3 and C3 to ground. Device withstands > 1000 discharges of ±15 kV contact discharge according the IEC 61000-4-2 model, far [3] exceeding the specified level 4. 5.4.1 SD-memory card interfacing using IP4052CX20/LF The low-ohmic CMD pull-up resistor connected to pin D3 is optional. This pin can be connected e. GPIO pin and set to “ ...
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... NXP Semiconductors IP4052CX20/ additional CMD pull- Fig 13. IP4052CX20/ typical SD-memory card interface application AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning V C3 R10 A1 R1 R11 R15 R12 R13 E3 R4 R14 GND n. All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 5.5 Very highly integrated memory card interface devices IP4352CX24/LF and IP4350CX24/LF The IP4350CX24/LF and the IP4352CX24/LF are products demonstrating the highest level of integration, consisting of ESD protection, EMI filter, and biasing resistors in a passive device. As the package is a 0.4 mm pitch CSP type, the total device size is approximately 2 × ...
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... NXP Semiconductors Table 14. Symbol Parameter ESD R 1-9 R 11- [ Device withstands > 1000 discharges of ±15 kV contact discharge according the IEC 61000-4-2 model, far [2] exceeding the specified level 4. AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning IP4350CX24/LF and IP4352CX24/LF parameters Conditions supply voltage ...
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... NXP Semiconductors Fig 14. IP4352CX24/LF and IP4350CX24/LF connected to a SD-memory card using mechanical card detect Fig 15. IP4352CX24/LF and IP4350CX24/LF connected to a SD-memory card using electrical card detect AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors 5.6 Active memory card voltage translator circuit IP4852CX25/LF The IP4852CX25/ voltage translator optimized to be used in conjunction with a 1.8 V operating host interface and an SD-memory card or a high-voltage range MMC. The device is high-speed compliant, containing a CLK channel with an additional feedback channel and 5 bidirectional voltage translators. ...
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... NXP Semiconductors Fig 16. IP4852CX25/LF schematic diagram Table 15. Symbol ESD The timing data listed load, even under worst-case conditions. Please note that the parameter values under condition T memory card supply level of 2.5 V only. This supply level is below the minimum requirement of 2.7 V for both, the SD-card and MMC specification. ...
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... NXP Semiconductors Table 16. Symbol Parameter AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning Processor side to memory card side timing with HIGH-ref = 0.7*V 0.2*V O Conditions = 25 °C; T amb V = 1.8 V; CC(host side 2.9 V; SD(SD side) HIGH-ref = LOW-ref = rise time 100 kΩ load ...
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... NXP Semiconductors 5.7 Active memory card voltage translator, power supply, ESD protection and EMI filter device IP4853CX24/LF The highest integration level among the various memory card interface products is offered by the IP4853CX24/LF. This device integrates the level-shifting functionality of the IP4852CX25/LF and the EMI filter/ESD protection of IP4350CX24/LF with an additional power supply unit (LDO × ...
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... NXP Semiconductors Fig 17. IP4853CX24/LF schematic diagram AN10911_1 Application note SD(HC)-memory card and MMC interface conditioning host side A4 VOLTAGE V BAT REGULATOR C1 CLK_IN E2 CLK_FB A2 DIR_CMD D2 CMD_H A3 DIR_0 D1 DATA0_H E3 DIR_1_3 E1 DATA1_H A1 DATA2_H B1 DATA3_H ENABLE R14 R15 All information provided in this document is subject to legal disclaimers. ...
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... NXP Semiconductors Table 17. Symbol BAT amb Δt/ΔV Some timing data are listed in As this device will be located close to the memory card holder and no major additional capacitance will be added to the driving output of the IP4853CX24/LF (EMI filter and ESD protection are already integrated), the high and the low limits are intentionally set and include some safety margin ...
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... NXP Semiconductors 6. Conclusion NXP Semiconductors offers a comprehensive portfolio of SD-memory card and MMC compatible interface conditioning and protection devices. This includes EMI filtering, system level ESD protection and biasing devices as well as level translators including also the memory card supply LDO. As shown before, the devices are optimized for compliance with their respective memory card interface in terms of channel capacitance, serial resistance and biasing resistor values ...
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... NXP Semiconductors 7. Abbreviations Table 19. Acronym CD CDM CSP DFN EMI ESD HBM IEC LDO MMC PCB RF SD SDIO SPI WLCSP WP 8. References [1] SD specifications, part 1, Physical Layer Specification version 2.00, May 9, 2006 [2] Multi Media Card System Specification version 4.3, JESD84-A43, November 2007 ...
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... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 10. Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 SD-memory card electrical interface . . . . . . . . 4 2.1 Bus operation conditions . . . . . . . . . . . . . . . . . 4 2.2 SD-memory card bus timing conditions . . . . . . 6 2.3 Capacitive load at the interface conditioning device output . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.4 SD-memory card detect mechanism . . . . . . . . 9 3 MMC electrical interface . . . . . . . . . . . . . . . . . . 9 3.1 Bus operating conditions . . . . . . . . . . . . . . . . . 9 3.2 Bus timing conditions ...