CMF10120D Cree Inc, CMF10120D Datasheet - Page 8

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Applications Information:
The Cree SiC DMOSFET has removed the upper voltage limit of silicon MOSFETs.
However, there are some differences in characteristics when compared to what is
usually expected with high voltage silicon MOSFETs. These differences need to be
carefully addressed to get maximum benefit from the SiC DMOSFET. In general,
although the SiC DMOSFET is a superior switch compared to its silicon counter-
parts, it should not be considered as a direct drop-in replacement in existing appli-
cations.
There are two key characteristics that need to be kept in mind when applying the
SiC DMOSFETs; modest transconductance and no turn-off tail. The modest trans-
conductance requires that V
needs to be 20V to optimize performance. This can
GS
be seen the Output and Transfer Characteristics shown in Figures 1-3. The modest
transconductance also affects the transition where the device behaves as a voltage
controlled resistance to where it behaves as a voltage controlled current source
as a function of V
. The result is that the transition occurs over higher values of
DS
V
than is usually experienced with Si MOSFETs and IGBTs. This might affect the
DS
operation anti-desaturation circuits, especially if the circuit takes advantage of the
device entering the constant current region at low values of forward voltage.
The modest transconductance needs to be carefully considered in the design of the
gate drive circuit. The first obvious requirement is that the gate driver be capable
of a 22V (or higher) swing. The recommended on state V
is +20V and the rec-
GS
ommended off state V
is between -2V to -5V. Please carefully note that although
GS
the gate voltage swing is higher than typical silicon MOSFETs and IGBTs, the to-
tal gate charge of the SiC DMOSFET is considerably lower. In fact, the product of
gate voltage swing and gate charge for the SiC DMOSFET is lower than comparable
silicon devices. The gate voltage must have a fast dV/dt to achieve fast switching
2.5V
times which indicates that a very low impedance driver is necessary. Lastly, the
fidelity of the gate drive pulse must be carefully controlled. The nominal threshold
voltage is 2.3V and the device is not fully on (dV
/dt ≈ 0) until the V
is above
DS
GS
16V. This is a noticeably wider range than what is typically experienced with sili-
con MOSFETs and IGBTs. The net result of this is that the SiC DMOSFET has a
somewhat lower ‘noise margin’. Any excessive ringing that is present on the gate
drive signal could cause unintentional turn-on or partial turn-off of the device. The
gate resistance should be carefully selected to insure that the gate drive pulse is
adequately dampened. To first order, the gate circuit can be approximated as a
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CMF10120D Rev. -