STL100N1VH5 STMicroelectronics, STL100N1VH5 Datasheet - Page 3

• Manufacturer Part Number: STL100N1VH5
• Description: MOSFET N-CH 12V 100A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL100N1VH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 12.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 500mV @ 250µA
• Gate Charge (qg) @ Vgs: 26.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2085pF @ 10V
• Power - Max: 60W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11219-2

STL100N1VH5
1
Electrical ratings
Table 2.
1. The value is rated according R
2. The value is rated according R
3. Pulse width limited by safe operating area
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4.
R
Symbol
P
P
Symbol
R
Symbol
I
thj-pcb
I
I
TOT
TOT
DM
V
I
I
thj-case
V
T
D
D
D
D
E
T
I
GS
DS
stg
AV
(1)
(2)
AS
(1)
(2)
J
(3)
(1)
(2)
(1)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Thermal resistance junction-case (Drain) (steady
state)
Thermal resistance junction-ambient
Not-repetitive avalanche current
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
thj-c
thj-pcb
Doc ID 018550 Rev 1
C
C
D
Parameter
= 25°C
= 25°C
Parameter
Parameter
GS
= I
AV
= 0)
, V
C
C
C
C
=100°C
DD
= 25 °C
= 100 °C
= 25 °C
= 12 V)
-55 to 150
Value
Value
Value
62.5
15.6
0.03
2.08
31.3
100
100
12.5
± 8
300
12
25
60
4
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
Unit
°C
mJ
W
W
V
V
A
A
A
A
A
A
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