STL100N1VH5 STMicroelectronics, STL100N1VH5 Datasheet - Page 4

• Manufacturer Part Number: STL100N1VH5
• Description: MOSFET N-CH 12V 100A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL100N1VH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 12.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 500mV @ 250µA
• Gate Charge (qg) @ Vgs: 26.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2085pF @ 10V
• Power - Max: 60W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11219-2

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 5.
Table 6.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
Q
oss
rss
iss
gs
gd
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 018550 Rev 1
V
V
V
V
Figure 14
I
V
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
GS
= 250 µA, V
=0
=6 V, I
= V
= 4.5 V, I
= 2.5 V, I
=10 V, f=1 MHz,
=4.5 V
= max rating,
= max rating @125 °C
= ± 8 V
Test conditions
Test conditions
GS
, I
D
D
= 12.5 A
D
D
= 250 µA
= 12.5 A
= 12.5 A
GS
= 0
Min.
Min.
0.5
12
-
-
0.0022
0.0032
2085
Typ.
Typ.
26.5
949
240
5.2
4.8
STL100N1VH5
Max.
0.003
0.004
Max.
±
100
10
-
-
1
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
V
V
Ω
Ω