STP260N6F6 STMicroelectronics, STP260N6F6 Datasheet - Page 3

• Manufacturer Part Number: STP260N6F6
• Description: MOSFET N-CH 75V 120A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP260N6F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 183nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 300W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11230-5

STI260N6F6, STP260N6F6
1
Electrical ratings
Table 2.
1. Current limited by package.
Table 3.
Symbol
R
Symbol
I
R
thj-case
DM
P
V
V
T
thj-a
T
TOT
I
I
T
DS
GS
stg
D
D
l
j
(1)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
Parameter
Parameter
C
Doc ID 17467 Rev 3
= 25 °C
GS
= 0)
C
C
= 25 °C
= 100 °C
- 55 to 175
Value
Value
± 20
62.5
120
134
480
300
300
0.5
75
2
Electrical ratings
°C/W
°C/W
W/°C
Unit
Unit
°C
°C
W
V
V
A
A
A
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