STP260N6F6 STMicroelectronics, STP260N6F6 Datasheet - Page 6

• Manufacturer Part Number: STP260N6F6
• Description: MOSFET N-CH 75V 120A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STP260N6F6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 183nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 300W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11230-5

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
100
0.1
BV
(A)
10
I
I
D
D
1
(norm)
400
350
300
250
200
150
100
0.1
(A)
DSS
50
1.0
0.9
0.8
0.7
0.6
1.1
0
0
-75
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
-25
V
GS
1
=10V
1
6V
25
I
D
=1mA
2
VDSS
75
10
vs. temperature
125
3
V
DS
175
(V)
5V
Doc ID 17467 Rev 3
V
100µs
1ms
10ms
Single pulse
Tc=25°C
AM09068v1
Tj=175°C
AM09069v1
AM09071v1
DS
T
(V)
J
(°C)
Figure 3.
Figure 5.
Figure 7.
10
10
R
I
10
DS(on)
K
D
400
350
300
200
100
250
150
-2
-1
(A)
(Ω)
50
3.5
3.0
4.0
2.0
1.5
1.0
0.5
2.5
0.0
-5
0
0.1
δ=0.5
0
Single pulse
0
0.2
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
20
-4
1
0.01
V
40
GS
10
2
=10V
-3
0.02
STI260N6F6, STP260N6F6
V
60
DS
3
10
=2V
0.05
Zth=k Rthj-c
-2
80
δ=tp/τ
tp
4
τ
100
10
-1
280tok
5
120
t
p
(s)
V
AM09070v1
AM09072v1
GS
I
D
(V)
(A)