IXFH60N50P3 IXYS, IXFH60N50P3 Datasheet - Page 2
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IXFH60N50P3
Manufacturer Part Number
IXFH60N50P3
Description
MOSFET N-CH 500V 60A TO247
Manufacturer
IXYS
Series
Polar3™ HiPerFET™r
Datasheet
1.IXFQ60N50P3.pdf
(5 pages)
Specifications of IXFH60N50P3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
6250pF @ 25V
Power - Max
1040W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
60 S, 35 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
60 A
Power Dissipation
1040 W
Mounting Style
Through Hole
Fall Time
8 ns
Gate Charge Qg
96 nC
Rise Time
16 ns
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.1
Ciss, Typ, (pf)
6250
Qg, Typ, (nc)
96
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1040
Rthjc, Max, (ºc/w)
0.12
Package Style
TO-247
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH60N50P3
Manufacturer:
BOURNS
Quantity:
22 500
Part Number:
IXFH60N50P3
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
TO-263 Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Gate Input Resistance
Resistive Switching Times
V
R
V
(TO-247 & TO-3P)
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 30A, -di/dt = 100A/μs
= 100V, V
= 10V, V
= 1Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
35
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
6250
Typ.
0.25
680
1.0
1.0
60
18
37
96
28
26
11
16
5
8
0.12 °C/W
Max.
Max.
250
240
6,404,065 B1
6,534,343
6,583,505
1.4
60
°C/W
IXFT60N50P3 IXFQ60N50P3
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-3P (IXFQ) Outline
TO-247 Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
IXFH60N50P3
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216