IXFH60N50P3 IXYS, IXFH60N50P3 Datasheet - Page 5
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IXFH60N50P3
Manufacturer Part Number
IXFH60N50P3
Description
MOSFET N-CH 500V 60A TO247
Manufacturer
IXYS
Series
Polar3™ HiPerFET™r
Datasheet
1.IXFQ60N50P3.pdf
(5 pages)
Specifications of IXFH60N50P3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
6250pF @ 25V
Power - Max
1040W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
60 S, 35 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
60 A
Power Dissipation
1040 W
Mounting Style
Through Hole
Fall Time
8 ns
Gate Charge Qg
96 nC
Rise Time
16 ns
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.1
Ciss, Typ, (pf)
6250
Qg, Typ, (nc)
96
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1040
Rthjc, Max, (ºc/w)
0.12
Package Style
TO-247
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH60N50P3
Manufacturer:
BOURNS
Quantity:
22 500
Part Number:
IXFH60N50P3
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXFT60N50P3 IXFQ60N50P3
IXFH60N50P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.2
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: F_60N50P3(W8)03-10-11