SI5319C-C-GM Silicon Laboratories Inc, SI5319C-C-GM Datasheet - Page 8

• Manufacturer Part Number: SI5319C-C-GM
• Description: IC CLOCK MULT/ATTENUATOR 36QFN
• Manufacturer: Silicon Laboratories Inc

Specifications of SI5319C-C-GM

• Input: *
• Output: *
• Frequency - Max: *
• Voltage - Supply: *
• Operating Temperature: *
• Mounting Type: Surface Mount
• Package / Case: 36-VFQFN Exposed Pad
• Frequency-max: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2. DC Characteristics (Continued)
(V
Si5319
8
Output Voltage High
Output Voltage High
Disabled Leakage
Current
Notes:
Table 3. Microprocessor Control
(V
I
Input Voltage Low
Input Voltage High
Input Current
Hysteresis of Schmitt
trigger inputs
Output Voltage Low
SPI Specifications
Duty Cycle, SCLK
Cycle Time, SCLK
Rise Time, SCLK
Fall Time, SCLK
DD
2
DD
C Bus Lines (SDA, SCL)
1.
2.
3. LVPECL outputs require nominal V
4. This is the amount of leakage that the 3-level inputs can tolerate from an external driver. See Si53xx Family
5. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 622.08 MHz.
= 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, T
= 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, T
Parameter
Current draw is independent of supply voltage.
No under- or overshoot is allowed.
Reference Manual for more details.
Parameter
Symbol
VHYS
Symbol
VOL
VIH
VIL
V
I
II
OZ
t
OH
DC
I2C
t
t
t
c
r
f
I2C
I2C
I2C
I2C
A
A
= –40 to 85 °C)
DD
= –40 to 85 °C)
Test Condition
V
V
V
V
SCLK = 10 MHz
VIN = 0.1 x V
IO = –2 mA
IO = –2 mA
Test Condition
≥ 2.5 V.
DD
DD
DD
DD
RSTb = 0
to 0.9 x V
V
V
IO = 3 mA
IO = 3 mA
= 2.5 or 3.3 V
DD
= 2.5 or 3.3 V
DD
20–80%
20–80%
= 1.71 V
= 2.97 V
= 1.8 V
= 1.8V
Rev. 1.0
DD
DD
V
V
DD
DD
–100
0.05 x V
Min
0.7 x V
0.1 x V
–0.4
–0.4
Min
–10
100
40
—
—
—
—
—
DD
DD
DD
Typ
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
0.25 x V
0.2 x V
Max
V
0.4
Max
10
60
25
25
—
—
—
100
DD
—
—
DD
DD
Unit
Unit
µA
ns
ns
ns
%
V
V
V
V
V
V
µA
V
V