ICS85320AMILF IDT, Integrated Device Technology Inc, ICS85320AMILF Datasheet - Page 10

IC TRANSLATOR LVPECL 8-SOIC

ICS85320AMILF

Manufacturer Part Number
ICS85320AMILF
Description
IC TRANSLATOR LVPECL 8-SOIC
Manufacturer
IDT, Integrated Device Technology Inc
Type
Translatorr
Datasheet

Specifications of ICS85320AMILF

Number Of Circuits
1
Ratio - Input:output
1:1
Differential - Input:output
No/Yes
Input
LVCMOS, LVTTL
Output
LVPECL
Frequency - Max
267MHz
Voltage - Supply
2.375 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC
Frequency-max
267MHz
Number Of Outputs
2
Operating Supply Voltage (max)
3.465V
Operating Temp Range
-40C to 85C
Propagation Delay Time
1.7ns
Operating Supply Voltage (min)
2.375V
Mounting
Surface Mount
Pin Count
8
Operating Supply Voltage (typ)
2.5/3.3V
Package Type
SOIC N
Duty Cycle
55%
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
800-1168
800-1168-5
800-1168
85320AMILF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ICS85320AMILF
Manufacturer:
IDT Integrated Device Technolo
Quantity:
135
Part Number:
ICS85320AMILF
Manufacturer:
IDT
Quantity:
20 000
This section provides information on power dissipation and junction temperature for the ICS85320I.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the ICS85320I is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for V
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the
device. The maximum recommended junction temperature for HiPerClockS
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
moderate air flow of 200 linear feet per minute and a multi-layer board, the appropriate value is 103.3°C/W per Table 5 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow,
and the type of board (single layer or multi-layer).
T
IDT
ABLE
ICS85320I
LVCMOS/LVTTL-TO-DIFFERENTIAL 3.3V, 2.5V LVPECL TRANSLATOR
/ ICS
Single-Layer PCB, JEDEC Standard Test Boards
Multi-Layer PCB, JEDEC Standard Test Boards
NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.
5. T
Power (core)
Power (outputs)
Total Power
The equation for Tj is as follows: Tj =
Tj = Junction Temperature
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
85°C + 0.117W * 103.3°C/W = 97.1°C. This is well below the limit of 125°C.
JA
A
3.3V, 2.5V LVPECL TRANSLATOR
= Ambient Temperature
HERMAL
= Junction-to-Ambient Thermal Resistance
R
MAX
ESISTANCE
_MAX
= V
MAX
(3.465V, with all outputs switching) = 86.6mW + 30.2mW = 116.6mW
= 30.2mW/Loaded Output pair
CC_MAX
* I
JA
EE_MAX
FOR
= 3.465V * 25mA = 86.6mW
8-
PIN
CC
JA
= 3.3V + 5% = 3.465V, which gives worst case results.
P
by Velocity (Linear Feet per Minute)
SOIC, F
OWER
JA
* Pd_total + T
ORCED
C
C
ONSIDERATIONS
153.3°C/W
112.7°C/W
ONVECTION
A
10
0
TM
devices is 125°C.
128.5°C/W
103.3°C/W
200
ICS8532AMI REV A NOVEMBER 13, 2006
115.5°C/W
JA
97.1°C/W
must be used. Assuming a
500

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