ADF4113HVBRUZ Analog Devices Inc, ADF4113HVBRUZ Datasheet - Page 5

• Manufacturer Part Number: ADF4113HVBRUZ
• Description: IC CHARGE PUMP HV SYNTH 16-TSSOP
• Manufacturer: Analog Devices Inc
• Type: Clock/Frequency Synthesizer (RF)r

Specifications of ADF4113HVBRUZ

• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 2:1
• Differential - Input:output: Yes/No
• Frequency - Max: 4GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 4GHz
• Pll Type: Frequency Synthesis
• Frequency: 4GHz
• Supply Current: 16mA
• Supply Voltage Range: 2.7V To 5.5V
• Digital Ic Case Style: TSSOP
• No. Of Pins: 16
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: EVAL-ADF4113HVEB1Z - BOARD EVALUATION FOR ADF4113HVEVAL-ADF4113EBZ2 - BOARD EVAL FOR ADF4113 1750MHZEVAL-ADF4113EBZ1 - BOARD EVAL FOR ADF4113EVAL-ADF411XEBZ1 - BOARD EVAL FOR ADF411X NO CHIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
RF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Lead Temperature, Soldering
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
GND = AGND = DGND = 0 V.
P
A
IN
to GND
Industrial (B Version)
Vapor Phase (60 sec)
Infrared (15 sec)
DD
DD
= 25°C, unless otherwise noted.
IN
A to RF
, RF
to GND
to DV
IN
A, RF
DD
IN
B
1
IN
B to GND
Rating
−0.3 V to +7 V
−0.3 V to +0.3 V
−0.3 V to +18 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
±320 mV
−40°C to +85°C
−65°C to +150°C
150°C
215°C
220°C
DD
P
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. A | Page 5 of 20
TRANSISTOR COUNT
The transistor count is 12,150 (CMOS) and 348 (bipolar).
THERMAL RESISTANCE
Table 4. Thermal Resistance
Package Type
TSSOP
LFCSP (Paddle Soldered)
LFCSP (Paddle Not Soldered)
ESD CAUTION
θ
150.4
122
216
JA
ADF4113HV
Unit
°C/W
°C/W
°C/W