ADF4360-4BCPZ Analog Devices Inc, ADF4360-4BCPZ Datasheet - Page 6

• Manufacturer Part Number: ADF4360-4BCPZ
• Description: IC INT SYNTH/VCO SEALED 24-LFCSP
• Manufacturer: Analog Devices Inc
• Type: Fanout Distribution, Integer N Synthesizer (RF)r

Specifications of ADF4360-4BCPZ

• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 1:2
• Differential - Input:output: No/No
• Frequency - Max: 1.75GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-LFCSP
• Frequency-max: 1.75GHz
• Pll Type: Frequency Synthesis
• Frequency: 1.45GHz
• Supply Current: 10mA
• Supply Voltage Range: 3V To 3.6V
• Digital Ic Case Style: LFCSP
• No. Of Pins: 24
• Operating Temperature Range: 0°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: EVAL-ADF4360-4EBZ1 - BOARD EVALUATION FOR ADF4360-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ADF4360-4
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
CSP θ
Lead Temperature, Soldering
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features proprie-
tary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
GND = AGND = DGND = 0 V.
VCO
VCO
A
Maximum Junction Temperature
(Paddle Soldered)
(Paddle Not Soldered)
Vapor Phase (60 sec)
Infrared (15 sec)
DD
DD
= 25°C, unless otherwise noted.
IN
to GND
to AV
to GND
to DV
to GND
JA
Thermal Impedance
DD
DD
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
150°C
50°C/W
88°C/W
215°C
220°C
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. A | Page 6 of 24
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only; functional operation of the device at these or any
other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)