SI4122-D-GT Silicon Laboratories Inc, SI4122-D-GT Datasheet - Page 4
![IC SYNTHESIZER RF2/IF 24TSSOP](/photos/6/54/65473/336-24-tssop_sml.jpg)
SI4122-D-GT
Manufacturer Part Number
SI4122-D-GT
Description
IC SYNTHESIZER RF2/IF 24TSSOP
Manufacturer
Silicon Laboratories Inc
Type
Frequency Synthesizerr
Datasheet
1.SI4112-D-GT.pdf
(36 pages)
Specifications of SI4122-D-GT
Number Of Circuits
1
Package / Case
24-TSSOP
Pll
Yes
Input
Clock
Output
Clock
Ratio - Input:output
1:2
Differential - Input:output
No/No
Frequency - Max
1.5GHz
Divider/multiplier
Yes/No
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Frequency-max
1.5GHz
Maximum Input Frequency
62.5 MHz to 1000 MHz
Minimum Input Frequency
2 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Operating Supply Voltage
2.7 V to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
336-1173
Si4133
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Parameter
DC Supply Voltage
Input Current
Input Voltage
Storage Temperature Range
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
3. For signals SCLK, SDATA, SEN, PWDN and XIN.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
this device should only be done at ESD-protected workstations.
3
3
Parameter
Symbol
1,2
V
V
T
DD
A
Symbol
T
V
V
I
STG
DD
IN
Rev. 1.61
IN
Test Condition
(V
(V
DDR
DDI
– V
– V
DDD
DDD
–0.3 to V
),
)
–0.5 to 4.0
–55 to 150
Value
±10
–0.3
DD
Min
–40
2.7
+0.3
Typ
3.0
25
—
Max
3.6
0.3
85
Unit
mA
o
V
V
C
Unit
°C
V
V