LMX2315TM National Semiconductor, LMX2315TM Datasheet - Page 4

• Manufacturer Part Number: LMX2315TM
• Description: IC FREQ SYNTHESIZER 20-TSSOP
• Manufacturer: National Semiconductor
• Series: PLLatinum™r
• Type: PLL Frequency Synthesizerr

Specifications of LMX2315TM

• Pll: Yes
• Input: CMOS, TTL
• Output: CMOS
• Number Of Circuits: 1
• Ratio - Input:output: 2:1
• Differential - Input:output: Yes/No
• Frequency - Max: 1.2GHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP
• Frequency-max: 1.2GHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *LMX2315TM

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I
I
f
f
f
Pf
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
CC
CC-PWDN
IN
OSC
IH
IL
IH
IL
IH
IL
Do-source
Do-sink
Do-source
Do-sink
Do-Tri
Do
Symbol
LMX2325 and LMX2320 V
OSC
IH
IL
Do
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
Voltage on Any Pin
Storage Temperature Range (T
Lead Temperature (T
Electrical Characteristics
IN
vs
V
V
with GND = 0V (V
CC
P
Power Supply Current
Power Down Current
Maximum Operating Frequency
Oscillator Frequency
Phase Detector Frequency
Input Sensitivity
Oscillator Sensitivity
High-Level Input Voltage
Low-Level Input Voltage
High-Level Input Current (Clock, Data)
Low-Level Input Current (Clock, Data)
Oscillator Input Current
High-Level Input Current (LE, FC)
Low-Level Input Current (LE, FC)
Charge Pump Output Current
Charge Pump Output Current
Charge Pump TRI-STATE Current
Charge Pump Output Current
Magnitude Variation vs Voltage
(Note 7)
I
)
L
) (solder, 4 sec.)
CC
= V
S
)
Parameter
P
= 3.0V; LMX2315 V
−65˚C to +150˚C
−0.3V to +6.5V
−0.3V to +6.5V
−0.3V to +6.5V
(Notes 4, 3)
+260˚C
CC
LMX2315
LMX2320
LMX2325
LMX2315
LMX2320
LMX2325
= V
P
4
= 5.0V; −40˚C
Recommended Operating
Conditions
Power Supply Voltage
Operating Temperature (T
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Operating Ratings indicate conditions for which the
device is intended to be functional, but do not guarantee specific perfor-
mance limits. For guaranteed specifications and test conditions, see the
Electrical Characteristics. The guaranteed specifications apply only for the
test conditions listed.
Note 4: This device is a high performance RF integrated circuit with an ESD
rating
should be done at ESD workstations.
V
V
V
V
V
V
No Load on OSC
V
V
OSC
(Note 5)
(Note 5)
V
V
V
V
V
V
V
V
V
V
0.5V
T = 85˚C
0.5V
T = 25˚C
V
V
CC
CC
CC
CC
CC
CC
CC
CC
IH
IL
IH
IL
IH
IL
CC
CC
CC
CC
CC
P
<
= 0V, V
= 0V, V
= 0V, V
= V
= V
= V
= 3.0V
= 5.0V
= 3.0V
= 3.0V
= 3.0V
= 5.0V
= 2.7V to 3.3V
= 3.3V to 5.5V
IN
= V
= V
= V
= V
2 kV and is ESD sensitive. Handling and assembly of this device
V
V
CC
CC
CC
P
P
P
P
Do
Do
Conditions
= 3.0V, V
= 3.0V, V
= 5.0V, V
= 5.0V, V
<
= 5.5V
= 5.5V
= 5.5V
CC
CC
CC
T
V
V
A
= 5.5V
= 5.5V
= 5.5V
P
P
<
− 0.5V
− 0.5V
out
85˚C, except as specified
Do
Do
Do
Do
= V
= V
= V
= V
A
)
P
P
P
P
/2
/2
/2
/2
−100
−100
−1.0
−1.0
−1.0
−2.5
V
Min
−15
−10
1.2
0.5
0.7
10
5
5
CC
−2.5
−5.0
Typ
6.0
6.5
2.5
5.0
10
11
30
60
−40˚C to +85˚C
V
2.7V to 5.5V
CC
Max
13.5
V
180
350
100
8.0
8.5
1.2
2.0
2.5
0.3
1.0
1.0
1.0
1.0
2.5
15
20
40
+6
+6
15
CC
to +5.5V
Units
GHz
MHz
MHz
MHz
dBm
V
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
nA
%
V
V
PP