SI4133GX2-BM Silicon Laboratories Inc, SI4133GX2-BM Datasheet - Page 5

SYNTH DUAL GSM RF(RF1/RF2/IF)

SI4133GX2-BM

Manufacturer Part Number
SI4133GX2-BM
Description
SYNTH DUAL GSM RF(RF1/RF2/IF)
Manufacturer
Silicon Laboratories Inc
Type
Frequency Synthesizerr
Datasheets

Specifications of SI4133GX2-BM

Pll
Yes
Input
Clock
Output
Clock
Number Of Circuits
1
Ratio - Input:output
1:2
Differential - Input:output
No/No
Frequency - Max
1.8GHz
Divider/multiplier
Yes/No
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-20°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-QFN
Frequency-max
1.8GHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 3. DC Characteristics
(V
Total Supply Current
RF1 Mode Supply Current
RF2 Mode Supply Current
IF Mode Supply Current
Standby Current
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
High Level Output Voltage
Low Level Output Voltage
Notes:
DD
1. RF1 = 1.55 GHz, RF2 = 1.2 GHz, IF = 1080 MHz
2. For signals SCLK, SDATA, SEN, and PWDN.
3. For signal AUXOUT.
= 2.7 to 3.6 V, T
Parameter
A
= –20 to 85 °C)
1
1
2
2
2
2
3
1
1
3
Symbol
V
V
V
V
I
I
IH
OH
IL
OL
IH
IL
RF1 and IF operating
Rev. 1.2
Test Condition
I
OH
I
OH
V
V
V
V
DD
IH
DD
PWDN
= –500 µA
= 500 µA
IL
=
= 3.6 V
=
=
3.6 V,
3.6 V
0 V,
V
0.7 V
DD
Min
–10
–10
–0.4
DD
Si4133G-X2
Typ
18
13
12
10
1
0.3 V
Max
0.4
31
17
17
14
10
10
DD
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
5

Related parts for SI4133GX2-BM