M48T512Y-70PM1 STMicroelectronics, M48T512Y-70PM1 Datasheet - Page 6

• Manufacturer Part Number: M48T512Y-70PM1
• Description: IC TIMEKPR NVRAM 4MBIT 5V 32-DIP
• Manufacturer: STMicroelectronics
• Series: Timekeeper®r
• Type: Clock/Calendar/NVSRAMr

Specifications of M48T512Y-70PM1

• Memory Size: 4M (512K x 8)
• Time Format: HH:MM:SS (24 hr)
• Date Format: YY-MM-DD-dd
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 32-DIP (600 mil) Module
• Clock Format: BCD
• Clock Ic Type: Timekeeper
• Memory Configuration: 512K X 8
• Supply Voltage Range: 4.5V To 5.5V
• Digital Ic Case Style: DIP
• No. Of Pins: 32
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes
• Nvram Features: RTC, Internal Battery, XTAL
• Access Time: 70ns
• Memory Case Style: DIP
• Bus Type: Parallel
• User Ram: 512KB
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temperature Classification: Commercial
• Operating Temperature (max): 70C
• Operating Temperature (min): 0C
• Pin Count: 32
• Mounting: Through Hole
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2856-5

M48T512Y, M48T512V
Figure 5. Power Down/Up Mode AC Waveforms
Table 7. Power Down/Up Trip Points DC Characteristics
(T
Note: 1. All voltages referenced to V
Table 8. Power Down/Up AC Characteristics
(T
Note: 1. V
6/14
A
A
Symbol
Symbol
t
t
V
= 0 to 70 °C)
DR
= 0 to 70 °C)
V
t
FB
t
F
t
t
2. At 25°C.
2. V
PFD
WP
t
RB
ER
SO
R
(1)
(2)
(2)
es V
PFD
PFD
V CC
V PFD (max)
V PFD (min)
V SO
V SS
INPUTS
(Including E)
OUTPUTS
PFD
(max) to V
(min) to V
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time
V
V
V
V
Write Protect Time on V
E Recovery Time
(min).
PFD
PFD
PFD
SS
to V
(max) to V
(min) to V
(min) to V
SS
PFD
PFD
fall time of less than t
(min) fall time of less than t
(min) V
VALID
RECOGNIZED
SS
PFD
PFD
tWP
SS
V
.
(max) V
CC
CC
Parameter
(min) V
Rise Time
Fall Time
CC
Parameter
FB
= V
CC
CC
tF
may cause corruption of RAM data.
Rise Time
PFD
Fall Time
tFB
F
may result in deselection/write protection not occurring until 200µs after V
M48T512Y
M48T512V
M48T512Y
M48T512V
tDR
M48T512Y
M48T512V
(1)
DON'T CARE
HIGH-Z
Min
4.2
2.7
10
tRB
V
PFD
Min
300
150
10
10
40
40
1
4.35
Typ
2.9
3.0
–100mV
tR
Max
150
200
tER
RECOGNIZED
VALID
Max
4.5
3.0
AI02385
YEARS
Unit
ms
µs
µs
µs
µs
µs
µs
Unit
CC
V
V
V
pass-