M48T35Y-70MH6E STMicroelectronics, M48T35Y-70MH6E Datasheet - Page 16

• Manufacturer Part Number: M48T35Y-70MH6E
• Description: IC TIMEKPR NVRAM 256KBIT5V 28SOI
• Manufacturer: STMicroelectronics
• Series: Timekeeper®r
• Type: Clock/Calendar/NVSRAMr

Specifications of M48T35Y-70MH6E

• Memory Size: 256K (32K x 8)
• Time Format: HH:MM:SS (24 hr)
• Date Format: YY-MM-DD-dd
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC, 28-SOH (8.48mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2850-5; M48T35Y-70MH6

Clock operations
3.6
16/28
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
10) is recommended in order to provide the needed filtering.
CC
to V
SS
Doc ID 2611 Rev 9
V CC
(cathode connected to V
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
CC
CC
DEVICE
, anode to V
bus. The energy stored in the
SS
SS
M48T35, M48T35Y
by as much as
). Schottky diode
AI02169