M48T35Y-70MH6E STMicroelectronics, M48T35Y-70MH6E Datasheet - Page 8

IC TIMEKPR NVRAM 256KBIT5V 28SOI

M48T35Y-70MH6E

Manufacturer Part Number
M48T35Y-70MH6E
Description
IC TIMEKPR NVRAM 256KBIT5V 28SOI
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheet

Specifications of M48T35Y-70MH6E

Memory Size
256K (32K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2850-5
M48T35Y-70MH6

Available stocks

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Manufacturer
Quantity
Price
Part Number:
M48T35Y-70MH6E
Manufacturer:
ST
Quantity:
5 510
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M48T35Y-70MH6E
Quantity:
5 510
Part Number:
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Part Number:
M48T35Y-70MH6E
Manufacturer:
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Quantity:
20 000
Operation modes
2
2.1
8/28
Operation modes
As
oscillator of the M48T35/Y are integrated on one silicon chip. The two circuits are
interconnected at the upper eight memory locations to provide user accessible BYTEWIDE
clock information in the bytes with addresses 7FF8h-7FFFh.
The clock locations contain the year, month, date, day, hour, minute, and second in 24-hour
BCD format. Corrections for 28, 29 (leap year - valid until 2100), 30, and 31 day months are
made automatically. Byte 7FF8h is the clock control register. This byte controls user access
to the clock information and also stores the clock calibration setting.
The eight clock bytes are not the actual clock counters themselves; they are memory
locations consisting of BiPORT™ READ/WRITE memory cells. The M48T35/Y includes a
clock control circuit which updates the clock bytes with current information once per second.
The information can be accessed by the user in the same manner as any other location in
the static memory array.
The M48T35/Y also has its own power-fail detect circuit. The control circuitry constantly
monitors the single 5 V supply for an out of tolerance condition. When V
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
battery backup switchover voltage (V
maintains data and clock operation until valid power returns.
Table 2.
1. See
X = V
READ mode
The M48T35/Y is in the READ mode whenever W (WRITE enable) is high and E (chip
enable) is low. The unique address specified by the 15 address inputs defines which one of
the 32,768 bytes of data is to be accessed. Valid data will be available at the data I/O pins
within address access time (t
the E and G access times are also satisfied.
If the E and G access times are not met, valid data will be available after the latter of the chip
enable access time (t
The state of the eight three-state data I/O signals is controlled by E and G. If the outputs are
activated before t
Deselect
WRITE
READ
READ
Deselect
Deselect
Mode
Figure 4 on page 7
IH
Table 11 on page 20
or V
V
IL
Operating modes
SO
; V
4.75 to 5.5 V
4.5 to 5.5 V
SO
to V
AVQV
≤ V
V
= battery backup switchover voltage.
PFD
or
SO
CC
ELQV
, the data lines will be driven to an indeterminate state until t
shows, the static memory array and the quartz controlled clock
(1)
(min)
for details.
) or output enable access time (t
(1)
AVQV
Doc ID 2611 Rev 9
) after the last address input signal is stable, providing that
V
V
V
V
E
X
X
IH
IL
IL
IL
SO
), the control circuitry connects the battery which
V
V
G
X
X
X
X
IH
IL
V
V
V
W
X
X
X
IH
IH
IL
DQ0-DQ7
GLQV
High Z
High Z
High Z
High Z
CC
D
D
OUT
IN
. As V
).
CC
Battery backup mode
CC
M48T35, M48T35Y
falls below the
CMOS standby
is out of
Standby
Power
Active
Active
Active
AVQV
.

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