MCP4551T-103E/MF Microchip Technology, MCP4551T-103E/MF Datasheet - Page 10
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MCP4551T-103E/MF
Manufacturer Part Number
MCP4551T-103E/MF
Description
IC DGTL POT 10K 256TAPS 8-DFN
Manufacturer
Microchip Technology
Datasheet
1.MCP4531-104EMS.pdf
(88 pages)
Specifications of MCP4551T-103E/MF
Taps
257
Resistance (ohms)
10K
Number Of Circuits
1
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Volatile
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-DFN
Resistance In Ohms
10K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
MCP4551T-103E/MFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP4551T-103E/MF
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP453X/455X/463X/465X
AC/DC CHARACTERISTICS (CONTINUED)
DS22096A-page 10
DC Characteristics
Rheostat
Differential
Non-linearity
MCP45X1
(Note 4, Note 8)
MCP4XX2 devices
only
(Note 4)
Capacitance (P
Capacitance (P
Capacitance (P
Note 1:
Parameters
2:
3:
4:
5:
6:
7:
8:
9:
10: Supply current is independent of current through the resistor network
11: When HVC/A0 = V
Resistance is defined as the resistance between terminal A to terminal B.
INL and DNL are measured at V
MCP4XX1 only.
MCP4XX2 only, includes V
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
This specification by design.
Non-linearity is affected by wiper resistance (R
temperature.
The MCP4XX1 is externally connected to match the configurations of the MCP45X2 and MCP46X2, and
then tested.
POR/BOR is not rate dependent.
A
w
B
)
)
)
R-DNL
Sym
C
C
C
BW
AW
W
IHH
, the I
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
All parameters apply across the specified operating ranges unless noted.
V
Typical specifications represent values for V
DD
WZSE
-0.375
-0.375
-0.375
-0.375
-0.375
-0.375
DD
-0.75
-0.75
-0.5
-0.5
-0.5
-0.5
Min
-1.0
-1.0
-0.5
-0.5
—
—
—
= +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
current is less due to current into the HVC/A0 pin. See I
W
and V
with V
+0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
±0.25
+0.5
+0.5
+0.5
WFSE
Typ
120
75
75
A
= V
.
DD
W
+0.375
+0.375
+0.375
+0.375
+0.375
+0.375
+0.75
+0.75
), which changes significantly overvoltage and
Max
+0.5
+1.0
+0.5
+1.0
+0.5
+0.5
+0.5
+0.5
and V
—
—
—
–40°C ≤ T
B
= V
Units
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
LSb
pF
pF
pF
SS
.
A
5 kΩ
10 kΩ
50 kΩ
100 kΩ 8-bit
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
f =1 MHz, Code = Full-Scale
≤ +125°C (extended)
DD
= 5.5V, T
8-bit
7-bit
8-bit
7-bit
8-bit
7-bit
7-bit
© 2008 Microchip Technology Inc.
Conditions
A
= +25°C.
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
5.5V, I
3.0V, I
(Note 7)
PU
specification
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
W
= 900 µA
= 480 µA
= 900 µA
= 480 µA
= 450 µA
= 240 µA
= 450 µA
= 240 µA
= 90 µA
= 48 µA
= 90 µA
= 48 µA
= 45 µA
= 24 µA
= 45 µA
= 24 µA