SST39WF1601-70-4C-Y1QE Microchip Technology, SST39WF1601-70-4C-Y1QE Datasheet - Page 16

• Manufacturer Part Number: SST39WF1601-70-4C-Y1QE
• Description: 1.65V To 1.95V 16Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm TRAY
• Manufacturer: Microchip Technology
• Series: -r

Specifications of SST39WF1601-70-4C-Y1QE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.65 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-WFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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©2011 Silicon Storage Technology, Inc.
Table 12:DC Operating Characteristics V
Table 13:Recommended System Power-up Timings
Table 14:Capacitance
Table 15:Reliability Characteristics
Symbol Parameter
I
I
I
I
I
I
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB
ALP
LI
LIW
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
2. For all SST39WF160x commercial and industrial devices, I
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
2. N
1
1
1
1
(room temperature), and V
parameter.
parameter.
parameter.
result in a higher minimum specification.
1,2
END
1
Power Supply Current
Read
Program and Erase
Standby V
Auto Low Power
Input Leakage Current
Input Leakage Current
on WP# pin and RST#
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
DD
Current
(T
DD
A
2
= 25°C, f=1 Mhz, other pins open)
= 1.8V. Not 100% tested.
V
0.8V
16 Mbit Multi-Purpose Flash Plus
DD
Min
16
-0.1
DD
Minimum Specification
DD
Limits
0.2V
SST39WF1601 / SST39WF1602
= 1.65-1.95V
Max
100 + I
0.1
10
25
40
40
10
10,000
1
1
SB
100
DD
typical is under 5 µA.
DD
Units
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
1
Test Conditions
Address input=V
V
CE#=V
open
CE#=WE#=V
CE#=V
CE#=V
All inputs=V
V
WP#=GND to V
V
V
V
V
I
I
Test Condition
OL
OH
Cycles
Years
Units
DD
IN
DD
OUT
DD
DD
mA
=100 µA, V
=GND to V
=-100 µA, V
Minimum
V
=V
=V
=V
V
=GND to V
I/O
IN
100
100
DD
DD
DD
IL
IHC
ILC
= 0V
= 0V
, OE#=WE#=V
Max
, V
Min
Max
, V
JEDEC Standard A117
JEDEC Standard A103
SS
DD
DD
JEDEC Standard 78
IL
DD
DD
, OE#=V
or V
=V
DD
=V
DD
DD
ILT
=V
Test Method
, V
=V
DD
DD
, V
or RST#=GND to
DS-25014A
/V
DD,
DD
DD
DD
Max
IHT,
Max
DD
=V
Maximum
WE#=V
Min
IH
IH
Min
=V
Data Sheet
DD
Units
12 pF
at f=5 MHz,
, all I/Os
6 pF
µs
µs
DD
T12.0 25014
T13.0 25014
T14.0 25014
T15.0 25014
Max
Max
IHC
04/11