MT47H128M4CF-25E:G Micron Technology Inc, MT47H128M4CF-25E:G Datasheet - Page 17

• Manufacturer Part Number: MT47H128M4CF-25E:G
• Description: IC SDRAM 512MB 800MHZ 60FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H128M4CF-25E:G

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (128Mx4)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Compliant

Packaging
Package Dimensions
Figure 8: 84-Ball FBGA (8mm x 12.5mm) – x16
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Solder ball material:
SAC305
3% Ag, 0.5% Cu)
Dimensions apply to
solder balls post-reflow
on Ø0.35 SMD
ball pads.
Seating
84X Ø0.45
plane
0.12 A
(96.5% Sn,
11.2 CTR
0.8 TYP
.
Notes:
A
Nonconductive overmold
9 8
1. All dimensions are in millimeters.
2. Solder ball material for this package is also available as leaded eutectic (62% Sn, 36%
Pb, 2% Ag).
7
1.8 CTR
6.4 CTR
TYP
8 ±0.1
0.8
3 2
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
17
Ball A1 ID
12.5 ±0.1
0.8 ±0.05
0.155
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
0.25 MIN
1.2 MAX
© 2004 Micron Technology, Inc. All rights reserved.
Ball A1 ID
Packaging