MT16JTF25664AZ-1G4F1 Micron Technology Inc, MT16JTF25664AZ-1G4F1 Datasheet

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MT16JTF25664AZ-1G4F1

Manufacturer Part Number
MT16JTF25664AZ-1G4F1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16JTF25664AZ-1G4F1

Main Category
DRAM Module
Module Type
240UDIMM
Device Core Size
64b
Organization
256Mx64
Total Density
17179869184
Number Of Elements
8
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
DDR3 SDRAM UDIMM
MT16JTF25664AZ – 2GB
MT16JTF51264AZ – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• DDR3 functionality and operations supported as per
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC3-12800, PC3-10600,
• 2GB (256 Meg x 64), 4GB (512 Meg x 64)
• Vdd = Vddq = +1.5V ± 0.75V
• Vddspd = +3.0V to +3.6V
• Reset pin for improved system stability
• Nominal and dynamic on-die termination (ODT) for
• Dual rank
• 8 internal device banks for concurrent operation
• Fixed burst length of 8 (BL8) and burst chop of
• Adjustable data-output drive strength
• Serial presence-detect (SPD) EEPROM
• Gold edge contacts
• Halogen-free
• Addresses are mirrored for second rank
• Fly-by topology
• Terminated control, command, and address bus
Table 1:
PDF: 09005aef837cdd2d/Source: 09005aef837cdc74
JTF16C_256_512x64AZ.fm - Rev. A 2/09 EN
Speed
Grade
-1G6
-1G4
-1G1
-1G0
component data sheet
(UDIMM)
PC3-8500, or PC3-6400
data, strobe, and mask signals
4 (BC4) via the mode register
-80C
-80B
Nomenclature
PC3-12800
PC3-10600
Industry
PC3-8500
PC3-8500
PC3-6400
PC3-6400
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
CL = 11 CL = 10 CL = 9
1600
1333
1333
1333
1333
Data Rate (MT/s)
2GB, 4GB (x64, DR): 240-Pin DDR3 SDRAM UDIMM
www.micron.com
CL = 8
1066
1066
1066
1
Figure 1:
Notes: 1. Contact Micron for industrial temperature
CL = 7
Options
• Operating temperature
• Package
• Frequency/CAS latency
1066
1066
Module Height: 30.0 mm (1.18 in)
800
800
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (halogen-free)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– 1.87ns @ CL = 8 (DDR3-1066)
– 2.5ns @ CL = 5 (DDR3-800)
– 2.5ns @ CL = 6 (DDR3-800)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
CL = 6
module offerings.
800
800
800
800
800
800
240-Pin UDIMM (MO-269 R/C B)
CL = 5
667
667
667
667
800
667
A
A
1
≤ +85°C)
≤ +70°C)
13.125
13.125
13.125
t
(ns)
12.5
RCD
15
15
©2008 Micron Technology, Inc. All rights reserved.
2
2
2
13.125
13.125
13.125
(ns)
12.5
t
15
15
RP
Marking
Features
None
-1G6
-1G4
-1G1
-1G0
-80C
-80B
Z
I
50.625
48.75
(ns)
49.5
52.5
52.5
t
50
RC

Related parts for MT16JTF25664AZ-1G4F1

MT16JTF25664AZ-1G4F1 Summary of contents

Page 1

... DDR3 SDRAM UDIMM MT16JTF25664AZ – 2GB MT16JTF51264AZ – 4GB For component data sheets, refer to Micron’s Web site: Features • DDR3 functionality and operations supported as per component data sheet • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • ...

Page 2

... Addressing Parameter Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters 2GB Modules Base device: MT41J128M8, Module 2 Part Number Density MT16JTF25664A(I)Z-1G6__ MT16JTF25664A(I)Z-1G4__ MT16JTF25664A(I)Z-1G1__ MT16JTF25664A(I)Z-1G0__ MT16JTF25664A(I)Z-80C__ ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vrefdq 31 DQ25 61 2 Vss 32 Vss 62 3 DQ0 33 ...

Page 4

... Serial data: SDA is a bidirectional pin used to transfer addresses and data into and out of the SPD EEPROM on the module on the I2C bus. Vdd Supply Power supply: 1.5V ±0.075V. The component Vdd and Vddq are connected to the module Vdd. Vddspd Supply SPD EEPROM positive power supply: +3.0V to +3.6V. ...

Page 5

... DQ Map DQ lines from component to module are shown in Table 6. Table 7: Component-to-Module-DQ Map Component Reference Component Module Number U10 U12 PDF: 09005aef837cdd2d/Source: 09005aef837cdc74 JTF16C_256_512x64AZ.fm - Rev. A 2/09 EN 2GB, 4GB (x64, DR): 240-Pin DDR3 SDRAM UDIMM Component Module Pin Reference DQ Number Number 123 7 129 128 4 122 ...

Page 6

... Table 7: Component-to-Module-DQ Map (continued) Component Reference Component Module Number DQ U14 U16 PDF: 09005aef837cdd2d/Source: 09005aef837cdc74 JTF16C_256_512x64AZ.fm - Rev. A 2/09 EN 2GB, 4GB (x64, DR): 240-Pin DDR3 SDRAM UDIMM Component Module Pin Reference DQ Number Number 29 150 U15 156 149 30 155 13 132 U17 138 131 14 137 Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 7

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DM DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ ZQ Vss DQS1# DQS1 DM1 DM DQ8 DQ DQ9 DQ ...

Page 8

... General Description The MT16JTF25664AZ and MT16JTF51264AZ DDR3 SDRAM modules are high-speed, CMOS, dynamic random-access 2GB and 4GB memory modules organized in a x64 configuration. These DDR3 SDRAM modules use internally configured 8-bank 1Gb and 2Gb DDR3 SDRAM devices. DDR3 SDRAM modules use double data rate architecture to achieve high-speed opera- tion ...

Page 9

... Electrical Specifications Stresses greater than those listed in Table 8, may cause permanent damage to the DRAM devices on the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 11

... Self refresh temperature current (SRT-enabled): MAX T All banks interleaved read current Reset current Notes: 1. One module rank in the active Idd, the other rank in Idd2PS (slow exit). 2. All ranks in this Idd condition. PDF: 09005aef837cdd2d/Source: 09005aef837cdc74 JTF16C_256_512x64AZ.fm - Rev. A 2/09 EN 2GB, 4GB (x64, DR): 240-Pin DDR3 SDRAM UDIMM ...

Page 12

... Self refresh temperature current (SRT-enabled): MAX T All banks interleaved read current Reset current Notes: 1. One module rank in the active Idd, the other rank in Idd2PS (slow exit). 2. All ranks in this Idd condition. PDF: 09005aef837cdd2d/Source: 09005aef837cdc74 JTF16C_256_512x64AZ.fm - Rev. A 2/09 EN 2GB, 4GB (x64, DR): 240-Pin DDR3 SDRAM UDIMM ...

Page 13

Serial Presence-Detect EEPROM Table 13: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to Vss Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input ...

Page 14

... R (8X) Back view U12 U13 U14 U15 5.0 (0.197) TYP 71.0 (2.79) TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 Module Dimensions U7 U8 23.3 (0.92) TYP 17.3 (0.68) TYP 0.8 (0.031) 9.5 (0.374) TYP TYP Pin 120 3 ...

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