BTS550P Infineon Technologies, BTS550P Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BTS550P
Manufacturer Part Number
BTS550P
Description
Manufacturer
Infineon Technologies
Datasheet
1.BTS550P.pdf
(15 pages)
Specifications of BTS550P
Switch Type
High Side
Power Switch Family
BTS550P
Power Switch On Resistance
2.8mOhm
Output Current
90A
Number Of Outputs
Single
Mounting
Through Hole
Supply Current
800uA
Package Type
TO-218
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
5 +Tab
Power Dissipation
360W
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTS550P E3146
Manufacturer:
TI
Quantity:
501
Company:
Part Number:
BTS550PE3146
Manufacturer:
INFN
Quantity:
3 622
V
clamped to V
faster deenergizing of the inductive load, but higher
peak power dissipation in the PROFET. In case of a
floating ground with a potential higher than 19V
referring to the OUT – potential the device will
switch on, if diode DS is not used.
Overvoltage protection of logic part
R
nominal. Note that when overvoltage exceeds 69 V
typ. a voltage above 5V can occur between IS and
GND, if R
Reverse battery protection
R
battery protection in applications with V
16 V
|V
D
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and
IS pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel
to the input switch, by using a MOSFET input switch
or by proper adjusting the current through R
R
Infineon Technologies AG
OUT(CL)
bb
V
S
V
R
bb
.
0.1A
R
IN
is used).
| - 12V
18)
= 120
IN
1 k
IN
; recommended value:
Signal GND
= -19 V typ. via V
IN
V
R
, V
R
if D
V
typ , V
IS
Z,IN
IS
D
bb
Logic
IS
Z,VIS
= 1 k
S
- V
is not used (or
V
R
D
Z,IS
ON(CL)
Z,IN
are not used.
Signal GND
IS
S
Logic
nominal. Add R
R
IS
= V
V
via V
R
ZG
Z,IS
V
. With D
R
R
Z1
= 64 V typ., R
bb
1
R
IN
V
. Using D
1
IN
Z,VIS
R
+
PROFET
bb
=
R
S
Power
IN
Transistor
1
|V
, V
IS
Power GND
bb
for reverse
bb
+
OUT
0.1A
above
| - 12V
S
R
R
1
L
IS
gives
V
OUT
IS
is
= 1 k
-
=
+ V
V bb
and
V
OUT
bb
if
9
V
inductive load
Provide a current path with load current capability
by using a diode, a Z-diode, or a varistor. (V
V or V
currents at IN and IS have to be limited to 250 mA.
Version a:
Version b:
Note that there is no reverse battery protection
when using a diode without additional Z-diode V
V
Version c: Sometimes a neccessary voltage clamp
is given by non inductive loads R
same switch and eliminates the need of clamping
circuit:
Zb
bb
V
V
.
V
bb
bb
bb
disconnect with energized
V
Zb
Zb
< 30 V if R
IN
IN
IN
Data Sheet BTS550P
=0). For higher clamp voltages
IN
PROFET
PROFET
V
IS
bb
V
IS
PROFET
bb
V
IS
bb
L
OUT
connected to the
OUT
2003-Oct-01
V
OUT
ZL
ZL
< 72
R
ZL
L
,