BAP63-02 NXP Semiconductors, BAP63-02 Datasheet - Page 3

Planar PIN diode in a SOD523 ultra small SMD plastic package

BAP63-02

Manufacturer Part Number
BAP63-02
Description
Planar PIN diode in a SOD523 ultra small SMD plastic package
Manufacturer
NXP Semiconductors
Type
Attenuator/Switchr
Datasheet

Specifications of BAP63-02

Configuration
Single
Forward Current
100mA
Forward Voltage
1.1V
Power Dissipation
715mW
Operating Temperature Classification
Military
Reverse Voltage
50V
Package Type
I-IGIA
Mounting
Surface Mount
Maximum Series Resistance @ Minimum If
3.5@0.5mAOhm
Maximum Series Resistance @ Maximum If
1.5@100mAOhm
Typical Carrier Life Time
310ns
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
UHF/SHF
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAP63-02
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BAP63-02
Manufacturer:
PHILIPS
Quantity:
19 105
Part Number:
BAP63-02Ј¬115
Manufacturer:
NXP
Quantity:
15 000
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
V
I
C
r
L
R
j
s
s
s
s
s
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
21
21
21
21
21
Silicon PIN diode
d
th j-s
2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
Rev. 04 - 8 January 2008
I
V
V
V
V
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
I
measured at I
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
F
R
R
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 100 mA; f = 100 MHz; note 1 0.9
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 35 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to
0.95
0.36
0.32
0.25
2.5
1.95
1.17
15.6
10.3
8.3
0.19
0.24
0.28
0.16
0.20
0.25
0.10
0.16
0.20
0.09
0.14
0.18
310
0.6
TYP.
VALUE
85
1.1
10
0.32
3.5
3
1.8
1.5
Product specification
MAX.
BAP63-02
UNIT
K/W
V
nA
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
nH
3 of 7
UNIT

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