NE425S01-T1B-A CALIFORNIA EASTERN LABS, NE425S01-T1B-A Datasheet
NE425S01-T1B-A
Specifications of NE425S01-T1B-A
Related parts for NE425S01-T1B-A
NE425S01-T1B-A Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... HETERO JUNCTION FIELD EFFECT TRANSISTOR BAND SUPER LOW NOISE AMPLIFIER DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. ...
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... DSS –0.2 –0.7 –2.0 V GS(off 0.60 0. 10.5 12 ˚C) A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 250 0 V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY NE425S01 TEST CONDITIONS V = – 100 2V mA GHz –0.2 V –0.4 V –0.6 V –0.8 V 1.5 3.0 - Drain to Source Voltage - MSG. MAG. ...
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... Gain Calculations | MSG MAG – NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 1.0 0 Frequency - GHz – – – NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT GHz = 2.0 1.5 12 1.0 0 NE425S01 Drain Current - ...
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... Rmax 0.5 +45˚ –45˚ –0.5 Rmax NE425S01 Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S 12 +90˚ +45˚ –45˚ –90˚ ...
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... NE425S01 S 22 MAG. ANG. (deg.) 74.5 .444 –18.9 73.3 .507 –26.8 65.3 .472 –32.7 62.7 .485 –37.1 59.3 .490 –40.9 53 ...
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... NE425S01 .95 19.30 1.29 10.25 1.09 9.28 1.16 8.45 1.19 30.046 6.02 1.12 25.177 4.86 1.11 23.488 4.12 1.06 26.711 4 ...
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... R /50 n MAG. ANG. (deg.) 0.93 14 0.38 0.80 29 0.33 0.65 48 0.25 0.49 72 0.18 0.36 102 0.11 0.27 139 0.08 0.24 –176 0.07 0.30 –122 0.10 0.47 –58 0.22 NE425S01 7 ...
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... TYPICAL MOUNT PAD LAYOUT 8 2.4 mm TYP. NE425S01 ...
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... Caution Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Soldering conditions Note : None Note : None NE425S01 Symbol IR30-00 9 ...
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... NE425S01 ...
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... NE425S01 11 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2 Caution NE425S01 M4 96.5 ...