NE425S01-T1B-A CALIFORNIA EASTERN LABS, NE425S01-T1B-A Datasheet - Page 3

• Manufacturer Part Number: NE425S01-T1B-A
• Manufacturer: CALIFORNIA EASTERN LABS

Specifications of NE425S01-T1B-A

• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 3V
• Drain Current (max): 90mA
• Drain-source Volt (max): 4V
• Operating Temperature (max): 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Document No. P11161EJ3V0DS00 (3rd edition)
Date Published October 1996 N
Printed in Japan
DESCRIPTION
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS
and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
• Gate Length : L
• Gate Width : W
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITION (T
NE425S01-T1
NE425S01-T1B
Drain to Source Voltage
Drain Current
Input Power
PART NUMBER
The NE425S01 is a Hetero Junction FET that utilizes the
NF = 0.60 dB TYP., G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
CHARACTERISTIC
C to Ku BAND SUPER LOW NOISE AMPLIFIER
g
g
Tape & reel 1000 pcs./reel
Tape & reel 4000 pcs./reel
= 200 m
0.20 m
SUPPLYING FORM
a
SYMBOL
= 12.0 dB TYP. at f = 12 GHz
HETERO JUNCTION FIELD EFFECT TRANSISTOR
V
P
I
DS
D
in
V
V
T
P
T
I
I
DS
GS
G
stg
D
tot
ch
MIN.
–65 to +125
N-CHANNEL HJ-FET
DATA SHEET
–3.0
I
100
165
125
A
4.0
DSS
= 25 ˚C)
MARKING
TYP.
10
2
G
mW
mA
˚ C
˚ C
A
MAX.
V
V
A
20
= 25 ˚C)
3
0
0.125 ±0.05
dBm
Unit
2
mA
V
PACKAGE DIMENSIONS
1
0.65 TYP.
G
2.0 ±0.2
1.9 ±0.2
4.0 ±0.2
NE425S01
(Unit: mm)
1.6
3
0.4MAX
©
4
1. Source
2. Drain
3. Source
4. Gate
1996