MT41J128M8HX-187E:D Micron Technology Inc, MT41J128M8HX-187E:D Datasheet - Page 65
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MT41J128M8HX-187E:D
Manufacturer Part Number
MT41J128M8HX-187E:D
Description
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheet
1.MT41J128M8HX-187ED.pdf
(208 pages)
Specifications of MT41J128M8HX-187E:D
Organization
128Mx8
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
190mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
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Quantity
Price
Company:
Part Number:
MT41J128M8HX-187E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Alternative 40 Ohm Driver
Table 43: 40 Ohm Driver Impedance Characteristics
40 Ohm Output Driver Sensitivity
Table 44: 40 Ohm Output Driver Sensitivity Definition
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
R
R
R
R
R
R
MR1[5,1]
ON(PD)
ON(PD)
ON(PD)
ON(PU)
ON(PU)
ON(PU)
Pull-up/pull-down mismatch (MM
0,0
Symbol
@ 0.2 × V
@ 0.5 × V
@ 0.8 × V
@ 0.2 × V
@ 0.5 × V
@ 0.8 × V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
R
40Ω
ON
Notes:
Note:
0.9 - dR
0.9 - dR
0.9 - dR
0.6 - dR
0.6 - dR
0.9 - dR
If either the temperature or the voltage changes after I/O calibration, then the tolerance
limits listed in Table 43 can be expected to widen according to Table 44 and Table 45
(page 66).
1. Tolerance limits assume RZQ of 240Ω (±1%) and are applicable after proper ZQ calibra-
2. Measurement definition for mismatch between pull-up and pull-down (MM
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the de-
1. ΔT = T - T(@ calibration), ΔV = V
Resistor
R
R
ON
ON
ON
ON
tion has been performed at a stable temperature and voltage (V
Refer to 40 Ohm Output Driver Sensitivity (page 65) if either the temperature or the
voltage changes after calibration.
ure both R
MM
vice operates between –40°C and 0°C (T
ON
ON
ON40(PD)
ON40(PU)
dTM × |ΔT| - dR
dTM × |ΔT| - dR
dTH × |ΔT| - dR
dTH × |ΔT| - dR
dTL × |ΔT| - dR
dTL × |ΔT| - dR
PUPD
PUPD
)
=
Min
Ron
ON(PU)
Ron
PU
- Ron
and R
ON
ON
ON
ON
ON
ON
NOM
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.5 × V
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
V
PD
OUT
ON(PD)
× 100
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
65
at 0.5 × V
DDQ
1.1 + dR
1.1 + dR
- V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1.4 + dR
1.1 + dR
–10%
1.1 + dR
1.4 + dR
Min
0.6
0.9
0.9
0.9
0.9
0.6
DDQ
DDQ
C
).
:
(@ calibration), and V
ON
ON
ON
ON
1Gb: x4, x8, x16 DDR3 SDRAM
ON
ON
dTM × |ΔT| + dR
dTM × |ΔT| + dR
dTH × |ΔT| + dR
dTH × |ΔT| + dR
dTL × |ΔT| + dR
dTL × |ΔT| + dR
Output Driver Impedance
Nom
1.0
1.0
1.0
1.0
1.0
1.0
n/a
Max
© 2006 Micron Technology, Inc. All rights reserved.
ON
ON
ON
ON
ON
ON
DD
DDQ
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
dVL × |ΔV|
dVM × |ΔV|
dVH × |ΔV|
Max
1.1
1.1
1.4
1.4
1.1
1.1
= V
10
= V
DDQ
DD
.
, V
PUPD
SSQ
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units
). Meas-
= V
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units
%
SS
).
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