MT41J128M8HX-187E:D Micron Technology Inc, MT41J128M8HX-187E:D Datasheet - Page 68
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MT41J128M8HX-187E:D
Manufacturer Part Number
MT41J128M8HX-187E:D
Description
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheet
1.MT41J128M8HX-187ED.pdf
(208 pages)
Specifications of MT41J128M8HX-187E:D
Organization
128Mx8
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
190mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT41J128M8HX-187E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Table 47: Differential Output Driver Characteristics
All voltages are referenced to V
Figure 29: DQ Output Signal
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Parameter/Condition
Output leakage current: DQ are disabled; 0V ≤ V
V
Output slew rate: Differential; For rising and falling
edges, measure between V
V
Output differential cross-point voltage
Differential high-level output voltage
Differential low-level output voltage
Delta Ron between pull-up and pull-down for DQ/DQS
Test load for AC timing and output slew rates
DDQ
OH,diff(AC)
; ODT is disabled; ODT is HIGH
= +0.2 × V
DDQ
Notes:
OL,diff(AC)
1. RZQ of 240Ω (±1%) with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-
2. V
3. See Figure 31 (page 69) for the test load configuration.
4. See Table 49 (page 71) for the output slew rate.
5. See Table 36 (page 62) for additional information.
6. See Figure 30 (page 69) for an example of a differential output signal.
SS
er ZQ calibration has been performed at a stable temperature and voltage (V
V
SSQ
REF
= –0.2 × V
= V
= V
DDQ
SS
).
/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
DDQ
OUT
and
Output Characteristics and Operating Conditions
≤
68
V
V
Symbol
MM
SRQdiff
OH,diff(AC)
V
OL,diff(AC)
OX(AC)
I
OZ
Output to V
PUPD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
V
MAX output
V
MIN output
OL(AC)
OH(AC)
V
TT
1Gb: x4, x8, x16 DDR3 SDRAM
REF
(V
Min
–10
–5
5
DDQ
- 150
+0.2 × V
–0.2 × V
/2) via 25Ω resistor
V
DDQ
DDQ
REF
© 2006 Micron Technology, Inc. All rights reserved.
Max
+10
+5
12
+ 150
Units
V/ns
mV
µA
%
V
V
DDQ
Notes
1, 2, 3
= V
1, 4
1, 4
1, 5
1
1
3
DD
,
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