CY7C53120E2-10SI Cypress Semiconductor Corp, CY7C53120E2-10SI Datasheet - Page 10

no-image

CY7C53120E2-10SI

Manufacturer Part Number
CY7C53120E2-10SI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C53120E2-10SI

Core Operating Frequency
10MHz
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Mounting
Surface Mount
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C53120E2-10SI
Manufacturer:
CY
Quantity:
21 584
Part Number:
CY7C53120E2-10SI
Manufacturer:
CY
Quantity:
17 515
Part Number:
CY7C53120E2-10SI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-10001 Rev. *F
20 pF Load
30 pF Load
30 pF Load
30 pF Load
(A0 – A15)
Data (Out)
(D0 – D7)
(D0 – D7)
Address
Data (In)
R/W
E
Figure 6. Drive Levels and Test Point Levels for Timing Specifications Unless Otherwise Specified
t
AD
PW
Memory READ
EH
t
RD
Figure 7. Test Point Levels for Driven-to-Three-State Time Measurements
t
cyc
Figure 8. Signal Loading for Driven-to-Three-State Time Measurements
Address
PW
Data In
DRIVE TO 2.4V
DRIVE TO 0.4V
t
EL
DSR
A — Signal valid-to-signal valid specification (maximum or minimum)
B — Signal valid-to-signal invalid specification (maximum or minimum)
Figure 9. External Memory Interface Timing Diagram
TEST SIGNAL
t
AD
t
DHR
t
AH
Memory READ
V
V
C
OH
OL
L
– Measured low output drive level
= 30 pF
– Measured high output drive level
Address
Data In
t
t
DHR
DSR
2.0V
0.8V
B
V
A
V
I
LOAD
OH
OL
+ 0.5 V
– 0.5 V
= 1.4 mA
t
2.0V
0.8V
AD
Memory WRITE
t
t
t
AH
RH
DHZ
V
t
DDW
DD
t
WR
/2
Address
t
DHW
Data Out
CY7C53150, CY7C53120
t
DDZ
t
AD
Memory WRITE
t
AH
t
DDW
Address
t
DHZ
t
t
t
WH
DHW
AH
t
Data Out
DDZ
Page 10
[+] Feedback

Related parts for CY7C53120E2-10SI