MT9HVF12872RHY-667G1 Micron Technology Inc, MT9HVF12872RHY-667G1 Datasheet - Page 10

• Manufacturer Part Number: MT9HVF12872RHY-667G1
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF12872RHY-667G1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200VLP SORDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 1Gb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.215A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Table 10:
PDF: 09005aef82882ca3/Source: 09005aef82882c52
HVF9C64_128x72RH.fm - Rev. C 1/09 EN
Parameter/Condition
Operating one bank active-precharge current:
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current: Iout = 0mA;
BL = 4, CL = CL (Idd), AL = 0;
t
between valid commands; Address bus inputs are switching; Data
pattern is same as Idd4W
Precharge power-down current: All device banks idle;
t
stable; Data bus inputs are floating
Precharge quiet standby current: All device banks idle;
t
inputs are stable; Data bus inputs are floating
Precharge standby current: All device banks idle;
is HIGH, S# is HIGH; Other control and address bus inputs are switching;
Data bus inputs are switching
Active power-down current: All device banks open;
t
bus inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
valid commands; Other control and address bus inputs are switching;
Data bus inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (Idd), AL = 0;
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating burst read current: All device banks open; Continuous
burst reads; Iout = 0mA; BL = 4, CL = CL (Idd), AL = 0;
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current;
t
Other control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks
interleaving reads; Iout = 0mA; BL = 4, CL = CL (Idd),
AL =
t
valid commands; Address bus inputs are stable during deselects; Data
bus inputs are switching
RC =
RAS =
CK =
CK =
CK =
RAS =
RAS =
RAS =
RFC (Idd) interval; CKE is HIGH, S# is HIGH between valid commands;
RRD =
t
t
RCD (Idd) - 1 ×
t
t
t
RC (Idd),
CK (Idd); CKE is LOW; Other control and address bus inputs are
CK (Idd); CKE is HIGH, S# is HIGH; Other control and address bus
CK (Idd); CKE is LOW; Other control and address
t
t
t
t
t
RAS MAX (Idd),
RAS MIN (Idd),
RAS MAX (Idd),
RAS MAX (Idd),
RRD (Idd),
DDR2 Idd Specifications and Conditions – 1GB
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
t
RAS =
t
RCD =
t
CK (Idd);
t
t
RAS MIN (Idd); CKE is HIGH, S# is HIGH between
RCD =
t
t
t
RP =
RP =
RP =
t
CK =
t
RCD (Idd); CKE is HIGH, S# is HIGH between
t
CK =
t
t
t
RP (Idd); CKE is HIGH, S# is HIGH between
RP (Idd); CKE is HIGH, S# is HIGH between
RP (Idd); CKE is HIGH, S# is HIGH between
t
t
t
RCD (Idd); CKE is HIGH, S# is HIGH
CK (Idd); REFRESH command at every
CK =
512MB, 1GB (x72, ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM
t
CK (Idd),
t
CK (Idd),
t
CK =
t
RC =
t
RC =
t
CK (Idd),
t
t
CK =
RC (Idd),
t
t
CK =
t
CK =
RC (Idd),
t
CK =
t
CK (Idd),
t
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
CK (Idd),
CK (Idd); CKE
t
10
CK (Idd),
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
Idd4W
Idd2Q
Idd2N
Idd3N
Idd4R
Idd2P
Idd3P
Idd0
Idd1
Idd5
Idd6
Idd7
-80E/
-800
1440
1440
2115
3015
810
990
450
450
360
540
63
63
90
Electrical Specifications
-667
1215
1215
1935
2520
765
900
360
360
270
495
63
90
63
©2007 Micron Technology, Inc. All rights reserved.
-53E
1125
1125
1890
2430
630
855
360
360
270
405
63
90
63
-40E
1845
2340
630
810
315
315
270
360
945
945
63
90
63
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA