MT9HVF12872RHY-667G1 Micron Technology Inc, MT9HVF12872RHY-667G1 Datasheet - Page 9

• Manufacturer Part Number: MT9HVF12872RHY-667G1
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF12872RHY-667G1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200VLP SORDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 1Gb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.215A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Idd Specifications
Table 9:
PDF: 09005aef82882ca3/Source: 09005aef82882c52
HVF9C64_128x72RH.fm - Rev. C 1/09 EN
Parameter/Condition
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: Iout = 0mA; BL = 4,
CL = CL (Idd), AL = 0;
t
bus inputs are switching; Data pattern is same as Idd4W
Precharge power-down current: All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (Idd), AL = 0;
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads; Iout = 0mA; BL = 4, CL = CL (Idd), AL= 0;
t
commands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
t
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; Iout = 0mA; BL = 4, CL = CL (Idd), AL =
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
RC =
RCD =
CK =
RAS =
RP =
RAS =
RFC (Idd) interval; CKE is HIGH, S# is HIGH between valid commands; Other
CK =
t
t
t
t
RP (Idd); CKE is HIGH, S# is HIGH between valid commands; Address
RC (Idd),
CK (Idd); CKE is LOW; Other control and address bus
CK (Idd),
t
t
t
RAS MAX (Idd),
RAS MAX (Idd),
RCD (Idd); CKE is HIGH, S# is HIGH between valid commands; Address
DDR2 Idd Specifications and Conditions – 512MB
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from the values specified in the
512Mb (64 Meg x 8) component data sheet
t
t
RAS =
RC =
t
t
CK =
RC (Idd),
t
RAS MIN (Idd); CKE is HIGH, S# is HIGH between valid
t
t
RP =
RP =
t
CK =
t
CK (Idd),
t
t
RP (Idd); CKE is HIGH, S# is HIGH between valid
RP (Idd); CKE is HIGH, S# is HIGH between valid
t
CK (Idd); REFRESH command at every
t
RRD =
512MB, 1GB (x72, ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM
t
CK =
t
RC =
t
RRD (Idd),
t
CK (Idd),
t
RC (Idd),
t
RCD (Idd) - 1 ×
t
CK =
t
t
CK =
RCD =
t
t
CK =
RAS =
t
t
t
CK =
RAS =
CK (Idd),
t
CK (Idd),
t
t
t
CK =
RCD (Idd); CKE is
CK (Idd),
t
t
t
CK (Idd); CKE is
RAS MAX (Idd),
CK =
t
RAS MIN (Idd),
9
t
CK (Idd);
t
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
CK (Idd); CKE
t
CK (Idd);
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
Idd4W
Idd2Q
Idd2N
Idd3N
Idd2P
Idd3P
Idd4R
Idd0
Idd1
Idd5
Idd6
Idd7
-80E/
1035
1755
1845
2070
2700
-800
Electrical Specifications
495
360
630
900
450
108
63
63
©2007 Micron Technology, Inc. All rights reserved.
-667
1530 1260 1035
1620 1305 1035
1620 1530 1485
2160 2025 1980
810
945
405
450
315
108
585
63
63
-53E -40E Units
720
855
360
405
270
108
495
63
63
720
810
315
360
225
108
405
63
63
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA