ATF521P8 Avago Technologies US Inc., ATF521P8 Datasheet

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ATF521P8

Manufacturer Part Number
ATF521P8
Description
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF521P8

Configuration
Single Dual Source
Drain-gate Voltage (max)
-5 to 1V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
ATF-521P8
High Linearity Enhancement Mode
in 2x2 mm
Data Sheet
Description
Avago Technologies’ ATF‑521P8 is a single‑voltage high
linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑
standard leadless plastic chip carrier (LPCC
The device is ideal as a medium‑power, high‑linearity
amplifier. Its operating frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over
300 years at a mounting temperature of +85°C. All
devices are 100% RF & DC tested.
Pin Connections and Package Marking
Note:
Package marking provides orientation and identification
“2P” = Device Code
“x” = Month code indicates the month of manufacture.
Note:
1. Enhancement mode technology employs a single positive V
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP‑N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
bias power.
Pin 7 (Drain)
Pin 1 (Source)
Pin 4 (Source)
Pin 2 (Gate)
Pin 8
Pin 6
Pin 5
Pin 3
2
LPCC
Bottom View
Top View
2Px
[3]
Package
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
[1]
Pseudomorphic HEMT
[3]
) package.
gs
,
Features
• Single voltage operation
• High linearity and P1dB
• Low noise figure
• Excellent uniformity in product specifications
• Small package size: 2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years
• MSL‑1 and lead‑free
• Tape‑and‑reel packaging option available
Specifications
• 2 GHz; 4.5V, 200 mA (Typ.)
• 42 dBm output IP3
• 26.5 dBm output power at 1 dB gain compression
• 1.5 dB noise figure
• 17 dB Gain
• 12.5 dB LFOM
Applications
• Front‑end LNA Q2 and Q3, driver or pre‑driver amplifier
• Driver amplifier for WLAN, WLL/RLL and MMDS applica‑
• General purpose discrete E‑pHEMT for other high linear‑
for Cellular/PCS and WCDMA wireless infrastructure
tions
ity applications
[4]
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Technologies Application Note
A004R: Electrostatic Discharge Damage and Control.
[2]
3

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ATF521P8 Summary of contents

Page 1

ATF-521P8 High Linearity Enhancement Mode in 2x2 mm LPCC Package 2 [3] Data Sheet Description Avago Technologies’ ATF‑521P8 is a single‑voltage high linearity, low noise E‑pHEMT housed in an 8‑lead JEDEC‑ standard leadless plastic chip carrier (LPCC The device is ...

Page 2

ATF-521P8 Absolute Maximum Ratings Symbol Parameter V Drain – Source Voltage DS V Gate –Source Voltage [ Gate Drain Voltage [ Drain Current [ Gate Current GS P Total Power Dissipation diss P RF ...

Page 3

ATF-521P8 Electrical Specifications T = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. A Symbol Parameter and Test Condition Vgs Operational Gate Voltage Vth Threshold Voltage Idss Saturated Drain Current ...

Page 4

Ohm 110 Ohm 1.5 pF .02 λ .03 λ RF Input Ohm 2.2 µF Gate Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement ...

Page 5

ATF-521P8 Typical Performance Curves Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) d Figure 8. OIP3 vs. I and GHz. ...

Page 6

ATF-521P8 Typical Performance Curves, Tuned for Optimal OIP3 4. 100 150 200 250 300 350 400 I (mA) dq Figure 17. PAE @ P1dB vs. I and ...

Page 7

ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I (mA) d Figure 24. OIP3 vs. I and GHz. ds ...

Page 8

ATF-521P8 Typical Performance Curves Tuned for Optimal P1dB 4. 100 150 200 250 300 350 400 I dq (mA) Figure 33. PAE @ P1dB vs. I and V dq ...

Page 9

ATF-521P8 Typical Scattering Parameters at 25°C, V Freq GHz Mag. Ang. dB 0.1 0.613 ‑96.9 33.2 0.2 0.780 ‑131.8 30.0 0.3 0.831 ‑147.2 27.3 0.4 0.855 ‑156.4 25.1 0.5 0.860 ‑162.0 23.5 0.6 0.878 ‑166.7 22.0 0.7 0.888 ...

Page 10

ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.823 ‑89.9 34.4 0.2 0.873 ‑128.7 30.5 0.3 0.879 ‑145.5 27.6 0.4 0.885 ‑155.1 25.2 0.5 0.883 ‑161.1 23.6 0.6 0.897 ‑165.9 22.1 0.7 0.895 ‑169.5 20.8 ...

Page 11

ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.913 ‑84.6 34.2 0.2 0.900 ‑125.0 30.3 0.3 0.896 ‑142.0 27.4 0.4 0.893 ‑152.3 25.1 0.5 0.882 ‑158.4 23.4 0.6 0.895 ‑164.2 21.8 0.7 0.893 ‑167.8 20.6 ...

Page 12

ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.843 ‑90.5 34.3 0.2 0.879 ‑129.3 30.3 0.3 0.888 ‑146.1 27.4 0.4 0.892 ‑155.6 25.1 0.5 0.886 ‑161.5 23.4 0.6 0.896 ‑165.7 21.8 0.7 0.897 ‑169.5 20.6 ...

Page 13

ATF-521P8 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.867 ‑94.6 33.7 0.2 0.894 ‑132.9 29.4 0.3 0.899 ‑148.2 26.5 0.4 0.896 ‑157.2 24.1 0.5 0.892 ‑162.8 22.4 0.6 0.910 ‑167.4 20.8 0.7 0.906 ‑170.8 19.6 ...

Page 14

ATF-521P8 Applications Information Description Avago Technologies' ATF‑521P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 42 dBm and a 1dB compression point of 26 dBm, ATF‑521P8 is well suited as a ...

Page 15

Amp Frequency Figure 4. High Pass Frequency Response. The second solution is a low pass configuration with a shunt capacitor and a series inductor shown in Figure 5 and Figure 5. Low ...

Page 16

C4 OUTPUT C1 INPUT Vdd Figure 8. Passive Biasing. Active Bias [2] Due to very high DC power dissipation and small package constraints, it ...

Page 17

PCB Layout A recommended PCB pad layout for the Leadless Plastic Chip Carrier (LPCC) package used by the ATF‑521P8 is shown in Figure 10. This layout provides plenty of plated through hole vias for good thermal and RF grounding. It ...

Page 18

Input Output 2PL Match Match 50 Ohm 50 Ohm Γ S11* = 0.89∠ -169 = 0.53∠ -176 L Figure 13. ATF-521P8 Matching. As described previously the input impedance must be matched to S11* in order to guarantee return loss greater ...

Page 19

Gain 1.6 1.8 2.0 2.2 2.4 FREQUENCY (GHz) Figure 15. Gain and Noise Figure vs. Figure 15. Gain and Noise Figure vs. Frequency. Frequency. Input and output return loss are both greater that 10 ...

Page 20

Using the 3GPP standards document Release 1999 version 2002‑6, the following channel configuration was used to test ACLR. This table contains the power levels of the main channels used for Test Model 1. Note that the DPCH can be made ...

Page 21

Thus, for reliable operation of ATF‑521P8 and extended MTBF recommended to use some form of thermal heatsinking. This may include any or all of the following suggestions: • Maximize vias underneath and around package; • Maximize exposed surface ...

Page 22

PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder + mask 0.60 (23.62) RF transmission 0.80 (31.50) line 0.15 (5.91) 0.55 (21.65) PCB Land Pattern (top view) Device Orientation REEL USER FEED ...

Page 23

Tape Dimensions 10° Max A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY ...

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