GP1S036HEZ0F Sharp Electronics, GP1S036HEZ0F Datasheet - Page 2

• Manufacturer Part Number: GP1S036HEZ0F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S036HEZ0F

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: Compact
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 150000ns
• Rise Time: 150000ns
• Pin Count: 5
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

■ Internal Connection Diagram
■ Outline Dimensions
Product mass : approx. 0.2g
or
5
4
3
Top View
show GATE Position
∗3.35
4.5
4
0.15
Plating material : SnCu (Cu : TYP. 2%)
1
2
Sharp mark
“S”
3
5
• Unspecifi ed tolerance : ±0.2mm
• The dimensions indicated by ∗ refer
• Burr is not included in the dimensions.
to those measured from the lead base.
Burr's dimensions : 0.15MAX.
PT
PT
2
1
∗1.27
4.6
2
1
∗1.27
0.4
1
2
3
4
5
Date code
Anode
Cathode
Emitter 2
Emitter 1
Collector
(Unit : mm)
2
Sheet No.: D3-A05601EN
GP1S036HEZ