BSP62 NXP Semiconductors, BSP62 Datasheet - Page 3

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BSP62

Manufacturer Part Number
BSP62
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSP62

Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
90V
Emitter-base Voltage (max)
5V
Base-emitter Saturation Voltage (max)
1.9@0.5mA@500mAV
Collector-emitter Saturation Voltage
1.3@0.5mA@500mAV
Collector Current (dc) (max)
1A
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / Rohs Status
Compliant

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NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 May 31
R
R
I
I
h
V
V
f
Switching times (between 10% and 90% levels); see Fig.3
t
t
j
CES
EBO
T
on
off
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
PNP Darlington transistors
th j-a
th j-s
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to solder point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
turn-on time
turn-off time
p
BSP60
BSP61
BSP62
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
V
V
V
I
V
I
I
T
I
I
f = 100 MHz
I
I
C
C
C
C
C
Con
Boff
BE
BE
BE
CE
j
I
I
= 150 °C
= 0; V
= −500 mA; I
= −500 mA; I
= −500 mA; I
= −500 mA; V
C
C
= 0.5 mA
= 0; V
= 0; V
= 0; V
= −500 mA; I
= −10 V; note 1; see Fig.2
= −150 mA
= −500 mA
EB
CE
CE
CE
3
CONDITIONS
= −4 V
= −45 V
= −60 V
= −80 V
B
B
B
CE
= −0.5 mA
= −0.5 mA;
= −0.5 mA
Bon
= −5 V;
note 1
CONDITIONS
= −0.5 mA;
BSP60; BSP61; BSP62
1 000
2 000
MIN.
VALUE
98
17
200
400
1 500
TYP.
Product data sheet
−50
−50
−50
−50
−1.3
−1.3
−1.9
MAX.
UNIT
K/W
K/W
2
.
nA
nA
nA
nA
V
V
V
MHz
ns
ns
UNIT

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