BSP60E6327XT Infineon Technologies, BSP60E6327XT Datasheet - Page 2
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BSP60E6327XT
Manufacturer Part Number
BSP60E6327XT
Description
Manufacturer
Infineon Technologies
Datasheet
1.BSP60E6327XT.pdf
(7 pages)
Specifications of BSP60E6327XT
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
5V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / Rohs Status
Compliant
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
I
Collector-base breakdown voltage
I
I
I
Emitter-base breakdown voltage
I
Collector-emitter cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
AC Characteristics
Transition frequency
I
1
2
C
C
C
C
C
C
E
C
C
C
C
C
C
C
For calculation of R thJA please refer to Application Note Thermal Resistance
Pulse test: t < 300µs; D < 2%
CE
EB
= 100 µA, I
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, I
= 150 mA, V
= 500 mA, V
= 500 mA, I
= 1 A, I
= 500 mA, I
= 1 A, I
= 100 mA, V
= 4 V, I
= V
CE0max
B
B
= 1 mA
= 1 mA
C
B
B
B
C
E
E
E
= 0
B
B
= 0 , BSP60
= 0 , BSP61
= 0 , BCP62
CE
CE
CE
= 0 , BSP60
= 0 , BSP61
= 0 , BSP62
= 0
2)
, V
= 0.55 mA
= 0.5 mA
= 10 V
= 10 V
= 5 V, f = 100 MHz
BE
= 0
1)
2)
A
= 25°C, unless otherwise specified
2)
2
f
Symbol
R
Symbol
V
V
V
I
I
h
V
V
T
CES
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
1000
2000
min.
45
60
80
60
80
90
5
-
-
-
-
-
-
-
Values
Value
typ.
200
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSP60-BSP62
max.
1.3
1.8
1.9
2.2
10
10
2007-04-26
-
-
-
-
-
-
-
-
-
-
MHz
Unit
K/W
Unit
V
µA
µA
-
V