BTS118DNT Infineon Technologies, BTS118DNT Datasheet

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BTS118DNT

Manufacturer Part Number
BTS118DNT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS118DNT

Switch Type
Low Side
Power Switch Family
BTS 118
Input Voltage
-0.2 to 10V
Power Switch On Resistance
240mOhm
Output Current
2.4A
Number Of Outputs
Single
Mounting
Surface Mount
Package Type
TO-252
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
2 +Tab
Power Dissipation
21W
Lead Free Status / Rohs Status
Compliant
Application
· All kinds of resistive, inductive and capacitive loads in switching
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Complete product spectrum and additional information http://www.infineon.com/hitfet
Smart Lowside Power Switch
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
or linear applications
auto restart
Pin 1
In
HITFET
ESD
Gate-Driving
â
Unit
Overload
Protection
Current
Limitation
Over-
temperature
Protection
Overvoltage-
Protection
Page 1
Short circuit
Protection
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
HITFET
Ò
Source
II.Generation BTS 118 D
Drain
Pin 2 and 4 (TAB)
V
Pin 3
bb
V
R
I
E
D(Nom)
DS
DS(on)
AS
P-TO252-3-11
2004-03-05
100
2.4
42
2
M
V
mW
A
J

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BTS118DNT Summary of contents

Page 1

... Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò ...

Page 2

Maximum Ratings 25°C, unless otherwise specified j Parameter Drain source voltage Supply voltage for full short circuit protection 1) Continuous input voltage 2) Continuous input current -0.2V £ V £ 10V IN V < -0. ...

Page 3

... Nominal load current 0 Current limit (active if V >2 cooling area 2 Device switched on into existing short circuit (see diagram Determination of I and a short circuit occurs, these values might be exceeded for max. 50 µs. 5 not subject to production test, calculated by R Symbol V DS(AZ) I DSS = IN(th) I IN(on) R DS(on) ...

Page 4

Electrical Characteristics Parameter 25°C, unless otherwise specified j Dynamic Characteristics Turn-on time Turn-off time ...

Page 5

Block diagram Terms HITFET Input circuit (ESD protection) Input Inductive and overvoltage output clamp Short circuit behaviour Gate Drive Source/ Ground Page ...

Page 6

Maximum allowable power dissipation P = f(T ) resp. tot f =55 K/W tot A thJA SMD @ 6cm2 1.5 1 0.5 0 -50 - On-state ...

Page 7

Typ. transfer characteristics I =f =12V Jstart Typ. output characteristics I =f =25° Jstart ...

Page 8

Typ. overload current I = f(t heatsink D(lim) bb Parameter: T jstart 25 A -40°C 25°C 15 85°C 10 +150° 0.5 1 1.5 2 2.5 11 Determination of I D(lim ...

Page 9

Package Ordering Code P-TO-252-3-11 Q67060-S6505-A5 +0.15 6.5 -0.05 A 5.4 ±0.1 (5) 0.15 max. 3x per side 0.75 ±0.1 2.28 4.57 0. All metal surfaces tin plated, except area of cut. +0.05 2.3 -0.10 +0.08 B 0.5 -0.04 ...

Page 10

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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