MT47H32M16HR-25E IT:F TR Micron Technology Inc, MT47H32M16HR-25E IT:F TR Datasheet - Page 28

• Manufacturer Part Number: MT47H32M16HR-25E IT:F TR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-25E IT:F TR

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Table 11: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Parameter/Condition
Operating burst read current: All banks
open, continuous burst reads, I
= 4, CL = CL (I
t
HIGH, CS# is HIGH between valid commands;
address bus inputs are switching; Data bus in-
puts are switching
Burst refresh current:
fresh command at every
CKE is HIGH, CS# is HIGH between valid com-
mands; Other control and address bus inputs
are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V;
CKE ≤ 0.2V; Other control and address bus in-
puts are floating; Data bus inputs are floating
Operating bank interleave read current:
All bank interleaving reads, I
4, CL = CL (I
t
(I
HIGH between valid commands; address bus
inputs are stable during deselects; Data bus
inputs are switching; See I
(page 23) for details
RAS =
CK =
DD
),
t
t
RCD =
CK (I
t
RAS MAX (I
DD
DD
t
DD
),
RCD (I
), AL =
t
), AL = 0;
RC =
DD
DD
DD
t
t
),
RCD (I
RC (I
Notes:
); CKE is HIGH, CS# is
Specifications and Conditions (Die Revision G) (Continued)
t
RP =
t
t
t
CK =
RFC (I
CK =
DD7
DD
DD
),
OUT
t
RP (I
) - 1 x
Conditions
t
t
1. I
2. V
3. I
4. Data bus consists of DQ, DM, DQS, DQS#, RDQS, RDQS#, LDQS, LDQS#, UDQS, and
5. Definitions for I
6. I
7. The following I
OUT
t
DD
CK (I
RRD =
CK (I
= 0mA; BL =
) interval;
UDQS#. I
tion devices when operated outside of the range 0°C ≤ T
DD
LOW
HIGH
Stable
Floating
Switching Inputs changing between HIGH and LOW every other clock cycle (once per
Switching Inputs changing between HIGH and LOW every other data transfer (once
DD
DD
DD1
= 0mA; BL
DD
DD
t
DD
); CKE is
CK (I
specifications are tested after the device is properly initialized. 0°C ≤ T
parameters are specified with ODT disabled.
, I
t
); re-
= +1.8V ±0.1V, V
RRD
),
DD4R
DD
DD
);
, and I
values must be met with all combinations of EMR bits 10 and 11.
V
V
Inputs stable at a HIGH or LOW level
Inputs at V
two clocks) for address and control signals
per clock) for DQ signals, not including masks or strobes
Symbol
IN
IN
I
I
DD
I
I
I
DD4R
DD6L
DD
DD7
DD5
DD6
DD7
≤ V
≥ V
values must be derated (I
conditions:
IL(AC)max
IH(AC)min
require A12 in EMR1 to be enabled during testing.
DDQ
REF
Configuration
= +1.8V ±0.1V, V
28
= V
x4, x8, x16
Electrical Specifications – I
x4, x8
x4, x8
x4, x8
DDQ
x16
x16
x16
/2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
DDL
DD
-25E/
120
150
100
150
215
-25
95
= +1.8V ±0.1V, V
7
3
limits increase) on IT-option or on AT-op-
-3E/-3
110
125
140
200
90
90
7
3
C
≤ 85°C:
© 2004 Micron Technology, Inc. All rights reserved.
REF
-37E
110
135
195
95
90
90
7
3
= V
DD
DDQ
Parameters
/2.
130
190
-5E
80
95
87
87
C
7
3
≤ +85°C.
Units
mA
mA
mA
mA