CY22E016L-SZ25XC Cypress Semiconductor Corp, CY22E016L-SZ25XC Datasheet

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CY22E016L-SZ25XC

Manufacturer Part Number
CY22E016L-SZ25XC
Description
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of CY22E016L-SZ25XC

Word Size
8b
Organization
2Kx8
Density
16Kb
Interface Type
Parallel
Access Time (max)
25ns
Operating Supply Voltage (typ)
5V
Package Type
SOIC
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
0C to 70C
Pin Count
28
Mounting
Surface Mount
Supply Current
85mA
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY22E016L-SZ25XC
Manufacturer:
CYPRESS
Quantity:
827
Cypress Semiconductor Corporation
Document Number: 001-06727 Rev. *E
Features
Logic Block Diagram
25 ns, 35 ns, and 45 ns access times
Hands off automatic STORE on power down with external
68 μF capacitor
STORE to QuantumTrap™ nonvolatile elements is initiated
by hardware or AutoStore on power down
RECALL to SRAM is initiated on power up
Infinite READ, WRITE, and RECALL cycles
10 mA typical ICC at 200 ns cycle time
1,000,000 STORE cycles to QuantumTrap
100 year data retention to QuantumTrap
Single 5V operation +10%
Commercial and industrial temperature
SOIC package
RoHS compliance
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
A
A
A
A
A
3
7
0
1
2
4
5
6
6
7
8
5
9
A
0
COLUMN DEC
COLUMN I/O
A
STATIC RAM
1
32 X 512
ARRAY
A
2
A
198 Champion Court
3
A
4
Quantum Trap
A
10
32 X 512
STORE
RECALL
Functional Description
The Cypress CY22E016L is a fast static RAM with a nonvol-
atile element incorporated in each static memory cell. The
SRAM is read and written an infinite number of times, while
independent, nonvolatile data resides in nonvolatile elements.
Data transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically on power down.
A 68 μF or larger capacitor tied from V
guarantees the STORE operation, regardless of power down
slew rate or loss of power from “hot swapping.” Transfers from
the nonvolatile elements to the SRAM (the RECALL operation)
take place automatically on restoration of power. A hardware
STORE is initiated with the HSB pin.
San Jose
16 Kbit (2K x 8) nvSRAM
V
CONTROL
CONTROL
CC
RECALL
POWER
STORE/
,
CA 95134-1709
V
CAP
HSB
Revised Apr 18, 2008
CY22E016L
CAP
OE
CE
WE
408-943-2600
to ground
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Related parts for CY22E016L-SZ25XC

CY22E016L-SZ25XC Summary of contents

Page 1

... Cypress Semiconductor Corporation Document Number: 001-06727 Rev Kbit ( nvSRAM Functional Description The Cypress CY22E016L is a fast static RAM with a nonvol- atile element incorporated in each static memory cell. The SRAM is read and written an infinite number of times, while independent, nonvolatile data resides in nonvolatile elements. ...

Page 2

... Power Supply AutoStore Capacitor. Supplies power to nvSRAM during power loss to store data from SRAM to CAP nonvolatile elements Connect No Connect. This pin is not connected to the die. Document Number: 001-06727 Rev 28-SOIC Top View 8 21 (Not To Scale Description CY22E016L HSB DQ7 DQ6 DQ5 DQ4 DQ3 Page [+] Feedback ...

Page 3

... In system power mode, both V connected to the +5V power supply without the 68 μF capacitor. In this mode, the AutoStore function of the CY22E016L operates Document Number: 001-06727 Rev the stored system charge as power goes down. The user must, however, guarantee that V during the 10 ms STORE cycle ...

Page 4

... STORE, the WRITE is inhibited until a negative transition detected. This protects against inadvertent writes during power up or brown out conditions. Noise Considerations The CY22E016L is a high speed memory. It must have a high frequency bypass capacitor of approximately 0.1 µF connected between V and possible ...

Page 5

... The STORE function is disabled by holding HSB HIGH with a driver capable of sourcing because it has to overpower the internal pull down device. The device drives HSB low for the onset of a STORE. When the CY22E016L is connected for AutoStore operation (system Table 1. Hardware Mode Selection CE WE ...

Page 6

... All others V < 0.2V or > Max, V < V < Max, V < V < > –4 mA except HSB = 8 mA except HSB = 3 mA CY22E016L = 25°C) ................................................... 1.0W [1] .................................... 15 mA Ambient Temperature V CC 0°C to +70°C 4.5V to 5.5V -40°C to +85°C Min Max Commercial Industrial – 0.2V). Standby 2 ...

Page 7

... Test Conditions T = 25° MHz 3 Test Conditions Test conditions follow standard test methods and proce- dures for measuring thermal impedance, per EIA / JESD51. 5.0V Output 512Ω CY22E016L Max Unit 28-SOIC Unit °C/W TBD °C/W TBD For Tri-state R1 963Ω Specifications R2 512Ω ...

Page 8

... If an SRAM Write has not taken place since the last nonvolatile cycle, no STORE will take place Document Number: 001-06727 Rev Part Min Max Description SWITCH. CY22E016L 35 ns Part 45 ns Part Unit Min Max Min Max CY22E016L Unit Min Max μs 550 10 ms μs 1 4.0 4.5 V 3.6 V Page [+] Feedback ...

Page 9

... RESTORE STORE 12. HSB must remain HIGH during READ and WRITE cycles. Document Number: 001-06727 Rev. *E Description DATA VALID ACE t LZCE t DOE t LZOE t ACTIVE PU CY22E016L CY22E016L Unit Min Max 700 300 ns [3, 5, 12] [3,12 HZCE t HZOE DATA VALID Page [+] Feedback ...

Page 10

... DATA OUT Figure 8. SRAM Write Cycle Number 2: CE Controlled ADDRESS DATA IN DATA OUT Note 13 less thanV during address transitions. IH Document Number: 001-06727 Rev. *E [12,13 SCE PWE DATA VALID t HZWE HIGH IMPEDANCE SCE PWE DATA VALID HIGH IMPEDANCE CY22E016L t LZWE Page [+] Feedback ...

Page 11

... BROWN OUT AutoStore TM NO STROKE (NO SRAM WRITES) NO RECALL NO RECALL (V DID NOT GO (V DID NOT BELOW V ) BELOW V ) RESET RESET Figure 11. Hardware STORE Cycle t STORE HLBL t DELAY CY22E016L t STORE BROWN OUT AutoStore TM RECALL WHEN V RETURNS CC ABOVE VSWITCH HIGH IMPEDANCE DATA VALID Page [+] Feedback ...

Page 12

... Part Numbering Nomenclature 016 Pb-Free nvSRAM 22 - AutoStore + Hardware Store Cypress Document Number: 001-06727 Rev. *E Option: T-Tape and Reel Blank - Std. Temperature Commercial (0 to 70° Industrial (-40°C to 85°C) Package 28-SOIC Data Bus Voltage 5.0V CY22E016L Speed Density: 016 - 16 Kb Page [+] Feedback ...

Page 13

... Ordering Information All the parts below are Pb-Free. Speed (ns) Ordering Code 25 CY22E016L-SZ25XCT CY22E016L-SZ25XC 25 CY22E016L-SZ25XIT CY22E016L-SZ25XI 35 CY22E016L-SZ35XCT CY22E016L-SZ35XC 35 CY22E016L-SZ35XIT CY22E016L-SZ35XI 45 CY22E016L-SZ45XCT CY22E016L-SZ45XC 45 CY22E016L-SZ45XIT CY22E016L-SZ45XI Package Diagrams 14 1 0.291[7.39] 0.300[7.62 0.697[17.70] 0.713[18.11] 0.013[0.33] 0.004[0.10] 0.050[1.27] 0.019[0.48] 0.0118[0.30] TYP. Document Number: 001-06727 Rev. *E Package ...

Page 14

... Document History Page Document Title: CY22E016L 16 Kbit ( nvSRAM Document Number: 001-06727 Issue Orig. of REV. ECN NO. Date Change ** 427789 See ECN *A 437321 See ECN *B 472053 See ECN *C 503290 See ECN *D 1349963 See ECN UHA/SFV *E 2427986 See ECN © Cypress Semiconductor Corporation, 2006-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product ...

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