5962-8753901LA QP SEMICONDUCTOR, 5962-8753901LA Datasheet - Page 13

• Manufacturer Part Number: 5962-8753901LA
• Manufacturer: QP SEMICONDUCTOR

Specifications of 5962-8753901LA

• Lead Free Status / Rohs Status: Supplier Unconfirmed

DSCC FORM 2234
APR 97
appendix A.
prior to quality conformance inspection. The following additional criteria shall apply:
* The maximum storage temperature shall not exceed +200C for packaged devices or +300C for unassembled devices.
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535,
4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices
c.
a.
b.
(1) Test condition D. The test circuit shall be maintained by the manufacturer under document revision level control
(2) T
*(1)
*(2)
*(3)
Margin test method A. * Steps 1 through 3 may be performed at wafer level.
(4)
(5)
(6)
(7)
(8)
DEFENSE SUPPLY CENTER COLUMBUS
Burn-in test, method 1015 of MIL-STD-883.
Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter
tests prior to burn-in are optional at the discretion of the manufacturer.
A data retention stress test shall be included as part of the screening procedure and shall consist of the following
steps:
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015
of MIL-STD-883.
A
MICROCIRCUIT DRAWING
Program greater than 95 percent of the bit locations, including the slowest programming cell. The remaining cells
shall provide a worst case speed pattern.
Bake, unbiased, for 72 hours at +140C or for 48 hours at +150C or for 8 hours at +200C, or 2 hours at +300C
for unassembled devices only.
Perform margin test using V
(i.e., t
Perform dynamic burn-in (see 4.2a).
Perform margin test using V
Perform electrical tests (see 4.2).
Erase (see 3.11.1). Devices may be submitted for groups A, B, C, and D testing.
Verify erasure (see 3.11.3).
= +125C, minimum.
COLUMBUS, OHIO 43218-3990
ACC
STANDARD
= 1 μs).
m
m
= +5.7 V minimum at +25C using loose timing
= +5.7 V at +25C.
SIZE
A
REVISION LEVEL
L
SHEET
5962-87539
13