SPP11N60C3XK Infineon Technologies, SPP11N60C3XK Datasheet - Page 3

SPP11N60C3XK

Manufacturer Part Number
SPP11N60C3XK
Description
Manufacturer
Infineon Technologies
Type
Power MOSFETr
Datasheet

Specifications of SPP11N60C3XK

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.38Ohm
Drain-source On-volt
600V
Gate-source Voltage (max)
±20V
Drain Current (max)
11A
Power Dissipation
125W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPP11N60C3XKSA1
Manufacturer:
INFINEON
Quantity:
3 000
Part Number:
SPP11N60C3XKSA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev.
Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Soldering temperature for TO-263: 220°C, reflow
5 C
6 C
7 ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
3 .2
5)
6)
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
Symbol
d(on)
r
d(off)
f
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
V
I
V
f=1MHz
V
V
V
I
R
V
V
V
V
D
D
DS
GS
GS
DS
DD
G
DD
DD
GS
DD
=7A
=11A,
=6.8Ω
≥2*I
=0V to 480V
=0V, V
=0V,
=380V, V
=480V, I
=480V, I
=0 to 10V
=480V, I
Page 3
Conditions
D
*R
DS
DS(on)max
D
D
D
GS
=25V,
=11A
=11A,
=11A
=0/10V,
oss
oss
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1200
typ.
390
8.3
5.5
5.5
30
45
85
10
44
22
45
*f.
5
5
SPP11N60C3
2009-11-27
max.
70
60
9
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
ns
nC
V
DSS
DSS
.
.

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