W9825G6DH-6I Winbond Electronics, W9825G6DH-6I Datasheet - Page 3

• Manufacturer Part Number: W9825G6DH-6I
• Manufacturer: Winbond Electronics
• Type: SDRAMr

Specifications of W9825G6DH-6I

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

1. GENERAL DESCRIPTION
W9825G6DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology,
W9825G6DH delivers a data bandwidth of up to 166M words per second (-6). To fully comply with the
personal computer industrial standard, W9825G6DH is sorted into the following speed grades: -6/-6C/-
6I and -75/75I. The - 6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The – 6C is
compliant to the 166MHz/CL3 specification. The -6I is compliant to the 166MHz/CL3 specification (the
-6I grade which is guaranteed to support -40°C ~ 85°C). The -75/75I is compliant to the 133MHz/CL3
specification (the 75I grade which is guaranteed to support -40°C ~ 85°C).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9825G6DH is ideal for main memory in
high performance applications.
2. FEATURES
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3.3V ± 0.3V Power Supply
Up to 166 MHz Clock Frequency
4,194,304 Words × 4 Banks × 16 Bits Organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Power Down Mode
Auto-precharge and Controlled Precharge
8K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80, using Pb free with RoHS compliant
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Publication Release Date:Apr. 24, 2008
W9825G6DH
Revision A12