BCP51T/R NXP Semiconductors, BCP51T/R Datasheet - Page 6

• Manufacturer Part Number: BCP51T/R
• Description: Trans GP BJT PNP 45V 1A 4-Pin(3+Tab) SOT-223 T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BCP51T/R

• Package: 4SOT-223
• Supplier Package: SOT-223
• Pin Count: 4
• Minimum Dc Current Gain: 63@5mA@2V|63@150mA@2V|40@500mA@2V
• Maximum Operating Frequency: 145(Typ) MHz
• Maximum Dc Collector Current: 1 A
• Maximum Collector Emitter Saturation Voltage: 0.5@50mA@500mA V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
6. Thermal characteristics
BC636_BCP51_BCX51_8
Product data sheet
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, standard footprint
typical values
duty cycle =
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.75
0.33
10
4
Table 7.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
10
Thermal characteristics
3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
BC636
BCP51
BCX51
BC636
BCP51
BCX51
10
Rev. 08 — 22 February 2008
2
10
1
Conditions
in free air
BC636; BCP51; BCX51
1
45 V, 1 A PNP medium power transistors
[1]
[1]
[2]
[1]
[2]
[3]
10
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
10
2
© NXP B.V. 2008. All rights reserved.
t
006aaa222
p
(s)
Max
150
190
125
230
135
95
40
17
20
10
3
2
2
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
.
.
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