MT29F1G08ABADAWP:D Micron Technology Inc, MT29F1G08ABADAWP:D Datasheet - Page 63

• Manufacturer Part Number: MT29F1G08ABADAWP:D
• Description: MICMT29F1G08ABADAWP:D 1GB SLC NAND 34NM
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAWP:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

PROGRAM FOR INTERNAL DATA MOVE (85h–10h)
Figure 47: PROGRAM FOR INTERNAL DATA MOVE (85h–10h) Operation
Figure 48: PROGRAM FOR INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT (85h)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Cycle type
Cycle type
I/O[7:0]
I/O[7:0]
RDY
RDY
Cycle type
I/O[7:0]
1
RDY
Command
Command
85h
The PROGRAM FOR INTERNAL DATA MOVE (85h-10h) command is functionally iden-
tical to the PROGRAM PAGE (80h-10h) command, except that when 85h is written to
the command register, cache register contents are not cleared.
85h
Command
Address
85h
Address
C1
C1
Address
Address
C1
Address
C2
C2
Address
t
WHR
C2
Address
R1
63
Address
R1
D
Dj
Address
IN
R2
Address
Dj + 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
Command
IN
R2
1Gb x8, x16: NAND Flash Memory
10h
Internal Data Move Operations
Dj + 2
t
D
t WB
WHR
IN
Command
t PROG
10h
D
t WB
Di
IN
© 2010 Micron Technology, Inc. All rights reserved.
Di + 1
D
t PROG
IN
1