STP7NM60N STMicroelectronics, STP7NM60N Datasheet - Page 4

• Manufacturer Part Number: STP7NM60N
• Description: POWER MOSFET
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP7NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
C
R
V
oss eq.
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
= 25 °C unless otherwise specified)
R
DSS
GSS
Q
oss eq.
oss
rss
iss
gs
gd
G
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
.
= 0)
Doc ID 16472 Rev 4
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= ± 20 V
= V
= 10 V, I
= 480 V, I
Figure
Test conditions
Test conditions
GS
, I
18)
GS
D
D
D
= 250 µA
= 2.5 A
= 0
= 5 A,
GS
C
=125 °C
= 0
Min.
Min.
600
2
-
-
-
-
Typ.
Typ.
24.6
0.84
363
130
1.1
5.4
2.7
7.7
14
3
oss
when V
Max.
Max.
100
100
0.9
1
4
-
-
-
-
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
Ω